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| 型号： | TC253SPD-B0 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 模拟信号调理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, CDIP22 |
| 封装： | 1.78 MM PITCH, WINDOWED, CERAMIC, DIP-22 |
| 文件页数： | 1/23页 |
| 文件大小： | 363K |
| 代理商： | TC253SPD-B0 |
TC253SPDB0
680 × 500 PIXEL IMPACTRON CCD IMAGE SENSOR
JULY 2003 SOCS084
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D Very Low Noise, High Sensitivity
Electronically Variable
D High Resolution, 1/3-in Format, Solid State
Charge-Coupled Device (CCD) Frame
Transfer Image Sensor for Black and White,
NTSC, and Computer Applications
D 340,000 Pixels per Field
D Frame Memory
D 656 (H) × 496 (V) Active Pixels in Image
Sensing Area Compatible With Electronic
Centering
D Multimode Readout Capability
Progressive Scan
Interlace Scan
Line Summing
D Fast Single-Pulse Clear Capability
D Continuous Electronic Exposure Control
From 1/30 s to 1/5,000 s
D 7.4-m Square Pixels
D Advanced Lateral Overflow Drain
D Low Dark Current
D High Photoresponse Uniformity Over a
Wide Spectral Range
D Solid-State Reliability With No Image
Burn-In, Resideual Imaging, Image
Distortion, Image Lag, or Microphonics
D Package With Peltier Cooler
description
The TC253SPD-B0 is a frame-transfer, CCD image sensor designed for use in black and white, NTSC TV,
computer, and special-purpose applications requiring high sensitivity, low noise, and small size.
The TC253SPD-B0 is a new device of the IMPACTRON
family of very-low noise, high sensitivity image sensors
that multiply charge directly in charge domain before conversion to voltage. The charge carrier multiplication
(CCM) is achieved by using a low-noise single-carrier, impact ionization process that occurs during repeated
carrier transfers through high-field regions. Applying multiplication pulses to specially designed gates activates
the CCM. The amount of multiplication is adjustable depending on the amplitude of the multiplication pulses. The
device function resembles the function of image intensifiers implemented in solid state.
This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These
circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C,
Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated
voltages to these high-impedance circuits. During storage or handling, the device leads should be shorted together or the device
should be placed in conductive foam. In a circuit, unused inputs should always be connected to an appropriate logic-voltage level,
preferably either VCC or ground. Specific guidelines for handling devices of this type are contained in the publication Guidelines for
Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
Copyright
2003, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
IMPACTRON is a trademark of Texas Instruments.
P + 1
P + 2
GND 3
12 GND
DUALINLINE PACKAGE
(TOP VIEW)
ODB 4
IAG2 5
SAG2 6
SRG1 7
SRG2 8
CMG 9
13 VOUT
14 NC
15 ADB
16 NC
17 SUB
20 GND
19 IAG1
18 SAG1
22 P
21 P
NC 11
SUB 10
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