- 您现在的位置：买卖IC网 > PDF目录98225 > THS4215DGN (TEXAS INSTRUMENTS INC) 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 PDF资料下载
参数资料
| 型号： | THS4215DGN |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| 封装： | POWERPAD, GREEN, PLASTIC, MSOP-8 |
| 文件页数： | 12/47页 |
| 文件大小： | 1197K |
| 代理商： | THS4215DGN |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页当前第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页
SLOS400E – SEPTEMBER 2002 – REVISED SEPTEMBER 2009 ................................................................................................................................... www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS
Over operating free-air temperature range (unless otherwise noted).
(1)
UNIT
Supply voltage, VS
16.5 V
Input voltage, VI
±VS
Output current, IO
250 mA
Continuous power dissipation
See Dissipation Ratings Table
Maximum junction temperature, TJ
(2)
+150°C
Maximum junction temperature, continuous operation, long-term reliability TJ
(3)
+125°C
Storage temperature range, Tstg
–65°C to +150°C
HBM
4000 V
ESD ratings
CDM
1500 V
MM
200 V
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2)
The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(3)
The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
PACKAGE DISSIPATION RATINGS
(1)
POWER RATING (3)
θJC
θJA
(2)
PACKAGE
(°C/W)
TA≤ +25°C
TA= +85°C
D (8-pin)
38.3
97.5
1.02 W
410 mW
DGN (8-pin)(1)
4.7
58.4
1.71 W
685 mW
DGK (8-pin)
54.2
260
385 mW
154 mW
DRB (8-pin)
5
45.8
2.18 W
873 mW
(1)
The THS4211/5 may incorporate a PowerPAD on the underside of the chip. This acts as a heat sink and must be connected to a
thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature
which could permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about utilizing the
PowerPAD thermally enhanced package.
(2)
This data was taken using the JEDEC standard High-K test PCB.
(3)
Power rating is determined with a junction temperature of +125°C. This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the junction temperature at or below +125°C for best performance and long
term reliability.
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
UNIT
Dual supply
±2.5
±7.5
Supply voltage, (VS+ and VS–)
V
Single supply
5
15
Input common-mode voltage range
VS– + 1.2
VS+ – 1.2
V
2
Copyright 2002–2009, Texas Instruments Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| THS4215DRBR | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| THS4215DR | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| THS4215D | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| THS4215DRBT | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| THS4215DGKR | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| THS4215DGNG4 | 功能描述:高速运算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4215DGNR | 功能描述:高速运算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4215DGNRG4 | 功能描述:高速运算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4215DR | 功能描述:高速运算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4215DRB | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
发布紧急采购，3分钟左右您将得到回复。