- 您现在的位置：买卖IC网 > PDF目录98225 > THS4215DGN (TEXAS INSTRUMENTS INC) 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 PDF资料下载
参数资料
| 型号： | THS4215DGN |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| 封装： | POWERPAD, GREEN, PLASTIC, MSOP-8 |
| 文件页数： | 22/47页 |
| 文件大小： | 1197K |
| 代理商： | THS4215DGN |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页当前第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页
P
Dmax +
Tmax–TA
q
JA
where
PDmax is the maximum power dissipation in the amplifier (W).
Tmax is the absolute maximum junction temperature (°C).
TA is the ambient temperature (°C).
θJA = θJC + θCA
θJC is the thermal coefficient from the silicon junctions to the
case (
°C/W).
θCA is the thermal coefficient from the case to ambient air
(
°C/W).
-4
-2
10
12
10 M
100 M
1 G
f - Frequency - Hz
Normalized
Gain
-
dB
0
8
6
4
2
SOIC, Rf = 0
PIN = -7 dB
VS =±5 V
Leadless MSOP, &
MSOP Rf = 0
SOIC, Rf = 100
_
+
Rf
49.9
499
2
1.5
1
0
-40
-20
0
20
-Maximum
Power
Dissipation
-
W
2.5
3
3.5
40
60
80
TA - Ambient Temperature - °C
P
D
8-Pin DGN Package
θJA = 170°C/W for 8-Pin SOIC (D)
θJA = 58.4°C/W for 8-Pin MSOP (DGN)
TJ= 150°C, No Airflow
0.5
8-Pin D Package
www.ti.com ................................................................................................................................... SLOS400E – SEPTEMBER 2002 – REVISED SEPTEMBER 2009
THERMAL ANALYSIS
When determining whether or not the device satisfies
the maximum power dissipation requirement, it is
The THS4211 device does not incorporate automatic
important to consider not only quiescent power
thermal shutoff protection, so the designer must take
dissipation, but also dynamic power dissipation. Often
care to ensure that the design does not violate the
maximum power dissipation is difficult to quantify
absolute
maximum
junction
temperature
of
the
because the signal pattern is inconsistent, but an
device. Failure may result if the absolute maximum
estimate of the RMS power dissipation can provide
junction temperature of 150°C is exceeded.
visibility into a possible problem.
The thermal characteristics of the device are dictated
by the package and the PCB. Maximum power
DESIGN TOOLS
dissipation for a given package can be calculated
using Equation 7:
Performance vs Package Options
The THS4211 and THS4215 are offered in a different
package options. However, performance may be
limited due to package parasitics and lead inductance
in some packages. In order to achieve maximum
performance of the THS4211 and THS4215, Texas
Instruments recommends using the leadless MSOP
(DRB) or MSOP (DGN) packages, in addition to
proper high-speed PCB layout. Figure 92 shows the
unity-gain frequency response of the THS4211 using
the leadless MSOP, MSOP, and SOIC package for
comparison. Using the THS4211 and THS4215 in a
(7)
unity-gain with the SOIC package may result in the
For systems where heat dissipation is more critical,
device
becoming
unstable.
In
higher
gain
the THS4211 is offered in an 8-pin MSOP with
configurations, this effect is mitigated by the reduced
PowerPAD. The thermal coefficient for the MSOP
bandwidth. As such, the SOIC is suitable for
PowerPAD package is substantially improved over
application with gains equal to or higher than +2 V/V
the traditional SOIC. Maximum power dissipation
or (–1 V/V).
levels are depicted in the graph for the two packages.
The data for the DGN package assumes a board
layout that follows the PowerPAD layout guidelines
referenced above and detailed in the PowerPAD
application notes in the Additional Reference Material
section at the end of the data sheet.
Figure 92. Effects of Unity-Gain Frequency
Response for Differential Packages
Figure 91. Maximum Power Dissipation vs
Ambient Temperature
Copyright 2002–2009, Texas Instruments Incorporated
29
相关PDF资料 |
PDF描述 |
|---|---|
| THS4215DRBR | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| THS4215DR | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| THS4215D | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| THS4215DRBT | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| THS4215DGKR | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| THS4215DGNG4 | 功能描述:高速运算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4215DGNR | 功能描述:高速运算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4215DGNRG4 | 功能描述:高速运算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4215DR | 功能描述:高速运算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4215DRB | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
发布紧急采购，3分钟左右您将得到回复。