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参数资料
| 型号： | TMS29LF040-80C5DBWE |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | PROM |
| 英文描述： | 512K X 8 FLASH 3V PROM, 80 ns, PDSO32 |
| 封装： | 8 X 14 MM, PLASTIC, TSOP-32 |
| 文件页数： | 5/38页 |
| 文件大小： | 495K |
| 代理商： | TMS29LF040-80C5DBWE |
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TMS29LF040, TMS29VF040
524288 BY 8-BIT
FLASH MEMORIES
SMJS825D – SEPTEMBER 1995 – REVISED JUNE 1998
13
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical dc characteristics over recommended ranges of supply voltage and ambient
temperature
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
VIH
High-level dc input voltage
CMOS
0.7 * VCC
VCC + 0.3
V
VIL
Low-level dc input voltage
CMOS
– 0.5
0.8
V
VID
Algorithm-selection and sector-protect/unprotect
input voltage
VCC = 3.3 V
11.5
12.5
V
VOH
High level dc output voltage
CMOS
VCC =VCC MIN
IOH = – 2.0 mA
0.85 * VCC
V
VOH
High-level dc output voltage
CMOS
VCC =VCC MIN
IOH = – 100 A
VCC – 0.4
V
VOL
Low-level dc output voltage
(see Note 4)
CMOS
VCC =VCC MIN
IOL = 4.0 mA
0.45
V
II
Input current (leakage)
VCC =VCC MAX
VI =VSS to VCC
±1
A
IO
Output current (leakage)
VCC =VCC MAX
VO =VSS to VCC
±1
A
IID
High-voltage load current
VCC =VCC MAX
A9 = 12.5 V
50
A
ICC1
VCC active current (see Note 5)
E = VIL,G = VIH
40
mA
ICC2
VCC active current (see Notes 6)
E = VIL,G = VIH
60
mA
ICC3
VCC supply current
(standby)
CMOS-input level
VCC = VCC MAX
E = VCC ± 0.3 V
100
A
See the recommended operating conditions table.
NOTES:
4. 5.8-mA IOL also available
5. ICC current in the read mode, switching at 6 MHz, IOUT = 0 mA
6. ICC current while erase or program operation is in progress
capacitance over recommended ranges of supply voltage and ambient temperature
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
Ci1
Input capacitance (All inputs except A9, E, G)
VI = 0 V, f = 1 MHz
7.5
pF
Ci2
Input capacitance (A9, E, G)
VI = 0 V, f = 1 MHz
9
pF
Co
Output capacitance
VO = 0 V, f = 1 MHz
12
pF
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