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参数资料
| 型号： | TMS29LF040-80C5DBWE |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | PROM |
| 英文描述： | 512K X 8 FLASH 3V PROM, 80 ns, PDSO32 |
| 封装： | 8 X 14 MM, PLASTIC, TSOP-32 |
| 文件页数： | 7/38页 |
| 文件大小： | 495K |
| 代理商： | TMS29LF040-80C5DBWE |
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TMS29LF040, TMS29VF040
524288 BY 8-BIT
FLASH MEMORIES
SMJS825D – SEPTEMBER 1995 – REVISED JUNE 1998
15
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
timing requirements controlled by W (see Figure 4, Figure 7, Figure 9, Figure 11, Figure 13,
Figure 15, and Figure 17)
ALTERNATE
SYMBOL
’29LF040-80
’29LF040-90
’29LF040-10
’29VF040-10
UNIT
SYMBOL
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
tAVAV
Cycle time, write
tc(W)
80
90
100
ns
tWHWH1
Cycle time, programming
operation
tc(W)PR
20
s
tWHWH2
Cycle time, sector-erase
operation
2
30
2
30
2
30
s
tWHWH3
Cycle time, chip-erase
operation
14
120
14
120
14
120
s
tWLAX
Hold time, address
th(A)
45
ns
tWHDX
Hold time, data valid after
W high
th(D)
0
ns
tWHEH
Hold time, E
th(E)
0
ns
tWHWL
Pulse duration, W high
tw(WH)
20
ns
tWLWH1
Pulse duration, W low
tw(WL)
35
45
ns
tWLWH2
Pulse duration, W low
(see Note 7)
100
s
tWLWH3
Pulse duration, W low
(see Note 8)
10
ms
tGHWL
Recovery time, read
before write
trec(R)
0
ns
tAVWL
Setup time, address
tsu(A)
0
ns
tDVWH
Setup time, data
tsu(D)
35
45
ns
tAVGH
Setup time, A0 and A6
low and A1 high to G high
(see Note 7)
0
ns
tAVGEH
Setup time, A0 low and
A1 high to G and E high
(see Note 8)
0
ns
tELWL
Setup time, E
tsu(E)
0
ns
tGHWH
Setup time, G
0
ns
tVCEL
Setup time, VCC
50
s
tEHVWL
Setup time, E VID to W
(see Note 8)
4
s
tGHVWL
Setup time, G VID to W
(see Notes 7 and 8)
4
s
tHVT
Transition time, VID (see
Notes 7 and 8)
4
s
NOTES:
7. Sector-protect timing (see Figure 15)
8. Sector-unprotect timing (see Figure 17)
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