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| 型号： | TPS40054PWPRG4 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 稳压器 |
| 英文描述： | SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO16 |
| 封装： | GREEN, PLASTIC, HTSSOP-16 |
| 文件页数： | 13/35页 |
| 文件大小： | 866K |
| 代理商： | TPS40054PWPRG4 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页当前第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页
SYNCHRONOUS RECTIFIER MOSFET POWER DISSIPATION
I
RMS + IO
1 * d
Amperes
RMS
(34)
P
DC + 2
I
O
V
F
t
DELAY
f
SW
(Watts)
(35)
P
RR + 0.5
Q
RR
V
IN
f
SW
(Watts)
(36)
P
SR + PDC ) PRR ) PCOND
(Watts)
(37)
TPS4005x POWER DISSIPATION
P
D + Qg
V
DR
f
SW
(Watts driver)
(38)
P
T +
2
P
D
V
DR
) IQ
V
IN
(Watts)
(39)
P
T + 2
Qg
f
SW ) IQ
V
IN
(Watts)
(40)
qJA + 36.515OC W
(41)
P
T +
T
J * TA
qJA
(Watts)
(42)
SLUS593F – DECEMBER 2003 – REVISED SEPTEMBER 2008 ...................................................................................................................................... www.ti.com
The power dissipated in the synchronous rectifier MOSFET is comprised of three components: RDS(on) conduction
losses, body diode conduction losses, and reverse recovery losses. RDS(on) conduction losses can be defined
using Equation 28 and the RMS current through the synchronous rectifier MOSFET is described in Equation 34.
The body-diode conduction losses are due to forward conduction of the body diode during the anti-cross
conduction delay time. The body diode conduction losses are described by Equation 35.
where
V
F is the body diode forward voltage
t
DELAY is the delay time just before the SW node rises
The 2-multiplier is used because the body diode conducts twice during each cycle (once on the rising edge and
once on the falling edge). The reverse recovery losses are due to the time it takes for the body diode to recover
from a forward bias to a reverse blocking state. The reverse recovery losses are described in Equation 36.
where
Q
RR is the reverse recovery charge of the body diode
The QRR is not always described in a MOSFET data sheet, but may be obtained from the MOSFET vendor. The
total synchronous rectifier MOSFET power dissipation is described in Equation 37.
The power dissipation in the TPS4005x is largely dependent on the MOSFET driver currents and the input
voltage. The driver current is proportional to the total gate charge, Qg, of the external MOSFETs. Driver power
(neglecting external gate resistance, ( refer to PowerPAD Thermally Enhanced Package[2] ) can be calculated
from Equation 38.
And the total power dissipation in the TPS4005x, assuming the same MOSFET is selected for both the high-side
and synchronous rectifier, is described in Equation 39.
or
where
I
Q is the quiescent operating current (neglecting drivers)
The maximum power capability of the PowerPad package is dependent on the layout as well as air flow. The
thermal impedance from junction to air, assuming 2 oz. copper trace and thermal pad with solder and no air flow,
The maximum allowable package power dissipation is related to ambient temperature by Equation 42.
Substituting Equation 35 into Equation 40 and solving for fSW yields the maximum operating frequency for the
TPS4005x. The result is described in Equation 43.
20
Copyright 2003–2008, Texas Instruments Incorporated
Product Folder Link(s): TPS40054 TPS40055 TPS40057
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