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| 型号： | TPS62410DRCR |
| 厂商： | Texas Instruments |
| 文件页数： | 4/33页 |
| 文件大小： | 0K |
| 描述： | IC REG BUCK SYNC ADJ 0.8A 10SON |
| 标准包装： | 1 |
| 类型： | 降压（降压） |
| 输出类型： | 可调式 |
| 输出数： | 2 |
| 输出电压： | 0.6 V ~ 6 V |
| 输入电压： | 2.5 V ~ 6 V |
| PWM 型： | 电压模式 |
| 频率 - 开关： | 2.25MHz |
| 电流 - 输出： | 800mA |
| 同步整流器： | 是 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-VFDFN 裸露焊盘 |
| 包装： | 标准包装 |
| 供应商设备封装： | 10-SON 裸露焊盘（3x3） |
| 产品目录页面： | 1033 (CN2011-ZH PDF) |
| 其它名称： | 296-25488-6 |
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www.ti.com
SLVS737 – FEBRUARY 2007
ELECTRICAL CHARACTERISTICS (continued)
V IN = 3.6V, V OUT = 1.8V, EN = V IN , MODE = GND, L = 2.2 μ H, C OUT = 20 μ F, T A = –40 ° C to 85 ° C typical values are at T A =
25 ° C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
POWER SWITCH
R DS(ON)
P-Channel MOSFET On-resistance, V IN = V GS = 3.6V
280
620
m ?
Converter 1,2
I LK_PMOS
P-Channel leakage current
V DS = 6.0V
1
μ A
R DS(ON)
N-Channel MOSFET On-resistance
V IN = V GS = 3.6V
200
450
m ?
Converter 1,2
I LK_SW1/SW2
Leakage Current into SW1/SW2 Pin Includes N-Chanel leakage currnet,
V IN = open, V SW = 6.0V, EN = GND (4)
6
7.5
μ A
I LIMF
Forward Current
OUT 1/2 800mA 2.5V ≤ V IN ≤ 6.0V
1.0
1.2
1.38
A
Limit PMOS and
NMOS
T SD
Thermal shutdown
Thermal shudown hysteresis
Increasing junction temperature
Decreasing junction temperature
150
20
° C
° C
OSCILLATOR
fSW
Oscillator frequency
2.5V ≤ VIN ≤ 6.0V
2.0
2.25
2.5
MHz
OUTPUT
V OUT
V ref
Adjustable output votage range
Reference voltage
0.6
600
V IN
V
mV
V OUT (PFM)
DC output voltage accuracy PFM
Voltage positioning active, MODE/DATA = GND,
device operating in PFM mode, VIN = 2.5V to
5.0V (6) (7)
–1.5%
1.01x
V OUT
2.5%
V OUT
mode, adjustable and fixed output
voltage (5)
DC output voltage load regulation
MODE/DATA = GND; device operating in PWM
Mode VIN = 2.5V to 6.0V (7)
V IN = 2.5V to 6.0V, Mode/Data = V IN , Fixed PWM
operation, 0mA < I OUT < I OUTMAX (8)
PWM operation mode
–1%
–1%
0%
0%
1%
1%
0.5
%/A
t Start up
Start-up time
Activation time to start
switching (9)
170
μ s
t Ramp
V OUT Ramp UP time
Time to ramp from 5% to 95% of V OUT
750
μ s
(4)
(5)
(6)
(7)
(8)
(9)
4
At pins SW1 and SW2 an internal resistor of 1M ? is connected to GND
Output voltage specification does not include tolerance of external voltage programming resistors
Configuration L typ 2.2 μ H, C OUT typ 20 μ F, see parameter measurement information, the output voltage ripple depends on the effective
capacitance of the output capacitor, larger output capacitors lead to tighter output voltage tolerance
In Power Save Mode, PWM operation is typically entered at I PSM = V IN /32 ? .
For V OUT > 2.2V, V IN min = V OUT +0.3V
This time is valid if one converter turns from shutdown mode (EN2 = 0) to active mode (EN2 =1) AND the other converter is already
enabled (e.g., EN1 = 1). In case both converters are turned from shutdown mode (EN1 and EN2 = low) to active mode (EN1 and/or
EN2=1) a value of typ 80 μ s for ramp up of internal circuits needs to be added. After t Start the converter starts switching and ramps
V OUT .
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