参数资料
| 型号： | TPS81256SIPR |
| 厂商： | Texas Instruments |
| 文件页数： | 18/26页 |
| 文件大小： | 0K |
| 描述： | IC REG BOOST SYNC 5V 0.6A 9USIP |
| 标准包装： | 1 |
| 类型： | 升压（升压） |
| 输出类型： | 固定 |
| 输出数： | 1 |
| 输出电压： | 5V |
| 输入电压： | 2.5 V ~ 5.5 V |
| PWM 型： | 电流模式 |
| 频率 - 开关： | 4MHz |
| 电流 - 输出： | 600mA |
| 同步整流器： | 是 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 9-VBGA |
| 包装： | 标准包装 |
| 供应商设备封装： | 9-uSIP（2.6x2.9） |
| 其它名称： | 296-30558-6 |
SLVSAZ9A – JUNE 2012 – REVISED AUGUST 2013
THERMAL AND RELIABILITY INFORMATION
The TPS8125x output current may need to be de-rated if it is required to operate in a high ambient temperature
or deliver a large amount of continuous power. The amount of current de-rating is dependent upon the input
voltage, output power and environmental thermal conditions. Care should especially be taken in applications
where the localized PWB temperature exceeds 65°C.
The TPS8125x die and inductor temperature should be kept lower than the maximum rating of 125°C, so care
should be taken in the circuit layout to ensure good heat sinking. Sufficient cooling should be provided to ensure
reliable operation.
To estimate the junction temperature, approximate the power dissipation within the TPS8125x by applying the
typical efficiency stated in this datasheet to the desired output power; or, by taking a power measurement if you
have an actual TPS8125x device or a TPS8125XEVM evaluation module. Then calculate the internal
temperature rise of the TPS8125x above the surface of the printed circuit board by multiplying the TPS8125x
power dissipation by the thermal resistance.
The thermal resistance numbers listed in the Thermal Information table are based on modeling the MicroSiP?
package mounted on a high-K test board specified per JEDEC standard. For increased accuracy and fidelity to
the actual application, it is recommended to run a thermal image analysis of the actual system. Figure 24 and
Figure 25 are thermal images of TI’s evaluation board with readings of the temperatures at speci ? c locations on
the device.
Figure 24. V IN =3.6V, V OUT =5V, I OUT =300mA
150mW Power Dissipation at Room Temp.
Figure 25. V IN =3.6V, V OUT =5V, I OUT =600mA
600mW Power Dissipation at Room Temp.
The TPS8125x is equipped with a thermal shutdown that will inhibit power switching at high junction
temperatures. The activation threshold of this function, however, is above 125°C to avoid interfering with normal
operation. Thus, it follows that prolonged or repetitive operation under a condition in which the thermal shutdown
activates necessarily means that the components internal to the MicroSiP? package are subjected to high
temperatures for prolonged or repetitive intervals, which may damage or impair the reliability of the device.
MLCC capacitor reliability/lifetime is dependant on temperature and applied voltage conditions. At higher
temperatures, MLCC capacitors are subject to stronger stress. On the basis of frequently evaluated failure rates
determined at standardized test conditions, the reliability of all MLCC capacitors can be calculated for their actual
operating temperature and voltage.
18
Product Folder Links: TPS81256
Copyright ? 2012–2013, Texas Instruments Incorporated
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