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参数资料
| 型号： | UN511TQ |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SMINI3-G1, SC-70, 3 PIN |
| 文件页数： | 11/17页 |
| 文件大小： | 440K |
| 代理商： | UN511TQ |
3
UNR511x Series
SJH00022BED
Characteristics charts of UNR5110
IC VCE
VCE(sat) IC
hFE IC
Common characteristics chart
PT Ta
0
50
100
150
200
250
0
40
80
120
160
Ambient temperature T
a (°C)
Total
power
dissipation
P
T
(mW
)
0
12
2
10
4
8
6
120
100
80
60
40
20
Collector-emitter voltage V
CE (V)
Collector
current
I
C
(mA
)
Ta
= 25°C
IB
= 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3mA
0.2mA
0.1mA
0.01
0.1
1
10
100
1
10
100
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (mA)
IC / IB
= 10
Ta
= 75°C
25
°C
25°C
0
1
100
200
300
400
10
100
1000
Forward
current
transfer
ratio
h
FE
Collector current I
C (mA)
VCE
= –10 V
Ta
= 75°C
25
°C
25°C
■ Electrical Characteristics (continued) T
a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Resistance
UNR5114
0.17
0.21
0.25
ratio
UNR511H
0.17
0.22
0.27
UNR511T
0.47
UNR511F
0.37
0.47
0.57
UNR511V
1.0
UNR5111/5112/5113/511L
0.8
1.0
1.2
UNR511E
1.70
2.14
2.60
UNR511D
3.7
4.7
5.7
Rank
Q
R
S
No-rank
hFE
160 to 260
210 to 340
290 to 460
160 to 460
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
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相关代理商/技术参数 |
参数描述 |
|---|---|
| UN511V | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
| UN511Z | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UN5154 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
| UN5210 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UN5210Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70 |
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