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参数资料
| 型号： | UNR521DR |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN |
| 文件页数： | 1/17页 |
| 文件大小： | 552K |
| 代理商： | UNR521DR |
Transistors with built-in Resistor
1
Publication date: January 2004
SJH00024CED
UNR521x Series (UN521x Series)
Silicon NPN epitaxial planar type
For digital circuits
■ Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
S-Mini type package, allowing automatic insertion through the tape
packing and magazine packing
■ Resistance by Part Number
Marking symbol (R1)(R2)
UNR5210 (UN5210)
8L
47 k
UNR5211 (UN5211)
8A
10 k
10 k
UNR5212 (UN5212)
8B
22 k
22 k
UNR5213 (UN5213)
8C
47 k
47 k
UNR5214 (UN5214)
8D
10 k
47 k
UNR5215 (UN5215)
8E
10 k
UNR5216 (UN5216)
8F
4.7 k
UNR5217 (UN5117)
8H
22 k
UNR5218 (UN5218)
8I
0.51 k
5.1 k
UNR5219 (UN5219)
8K
1 k
10 k
UNR521D (UN521D)
8M
47 k
10 k
UNR521E (UN521E)
8N
47 k
22 k
UNR521F (UN521F)
8O
4.7 k
10 k
UNR521K (UN521K)
8P
10 k
4.7 k
UNR521L (UN521L)
8Q
4.7 k
4.7 k
UNR521M (UN521M)
EL
2.2 k
47 k
UNR521N (UN521N)
EX
4.7 k
47 k
UNR521T (UN521T)
EZ
22 k
47 k
UNR521V (UN521V)
FD
2.2 k
2.2 k
UNR521Z (UN521Z)
FF
4.7 k
22 k
■ Absolute Maximum Ratings T
a
= 25°C
Note) The part numbers in the parenthesis show conventional part number.
Internal Connection
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
B
R1
R2
C
E
2.1
±
0.1
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1.25
±
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±
0.1
0.9
±
0.1
0
to
0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5
10
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
Collector current
IC
100
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
This product complies with the RoHS Directive (EU 2002/95/EC).
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| UP0.4C-330 | 1 ELEMENT, 32.2 uH, GENERAL PURPOSE INDUCTOR, SMD |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| UNR521E | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UNR521E(UN521E) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:複合デバイス － 抵抗内蔵型トランジスタ |
| UNR521E00L | 功能描述:TRANS NPN W/RES 60 HFE S-MINI 3P RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路﹐预偏压式 系列:- 标准包装:10,000 系列:- 晶体管类型:NPN - 预偏压 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:50V 电阻器 - 基极 (R1)（欧）:47k 电阻器 - 发射极 (R2)（欧）:47k 在某 Ic、Vce 时的最小直流电流增益 (hFE):70 @ 5mA，5V Ib、Ic条件下的Vce饱和度（最大）:300mV @ 500µA，10mA 电流 - 集电极截止（最大）:- 频率 - 转换:100MHz 功率 - 最大:250mW 安装类型:表面贴装 封装/外壳:SC-70，SOT-323 供应商设备封装:PG-SOT323-3 包装:带卷 (TR) 其它名称:SP000756242 |
| UNR521F | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
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