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参数资料
| 型号： | UNR521DR |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN |
| 文件页数： | 10/17页 |
| 文件大小： | 552K |
| 代理商： | UNR521DR |
UNR521x Series
2
SJH00024CED
■ Electrical Characteristics T
a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 A, IE = 050
V
Collector-emitter voltage (Base open)
VCEO
IC
= 2 mA, I
B
= 050
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
Emitter-base UNR5210/5215/5216/5217
IEBO
VEB
= 6 V, I
C
= 0
0.01
mA
cutoff current UNR5213
0.1
(Collector
UNR5212/5214/521D/
0.2
open)
521E/521M/521N/521T
UNR521Z
0.4
UNR5211
0.5
UNR521F/521K
1.0
UNR5219
1.5
UNR5218/521L/521V
2.0
Forward
UNR521V
hFE
VCE
= 10 V, I
C
= 5 mA
6
20
current
UNR5218/521K/521L
20
transfer
UNR5219/521D/521F
30
ratio
UNR5211
35
UNR5212/521E
60
UNR521Z
60
200
UNR5213/5214/521M
80
UNR521N/521T
80
400
UNR5210*/5215*/5216*/5217*
160
460
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 0.3 mA
0.25
V
UNR521V
IC
= 10 mA, I
B
= 1.5 mA
Output voltage high-level
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 k
4.9
V
Output voltage low-level
VOL
VCC = 5 V, VB = 2.5 V, RL = 1 k
0.2
V
UNR5213/521K
VCC
= 5 V, V
B
= 3.5 V, R
L
= 1 k
UNR521D
VCC = 5 V, VB = 10 V, RL = 1 k
UNR521E
VCC = 5 V, VB = 6.0 V, RL = 1 k
Transition frequency
fT
VCB
= 10 V, I
E
= 2 mA, f = 200 MHz
150
MHz
Input
UNR5218
R1
30%
0.51
+30%
k
resistance UNR5219
1.0
UNR521M/521V
2.2
UNR5216/521F/521L/521N
4.7
UNR521Z
UNR5211/5214/5215/521K
10
UNR5212/5217/521T
22
UNR5210/5213/521D/521E
47
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
No-rank
hFE
160 to 260
210 to 340
290 to 460
160 to 460
This product complies with the RoHS Directive (EU 2002/95/EC).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| UNR521E | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UNR521E(UN521E) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:複合デバイス － 抵抗内蔵型トランジスタ |
| UNR521E00L | 功能描述:TRANS NPN W/RES 60 HFE S-MINI 3P RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路﹐预偏压式 系列:- 标准包装:10,000 系列:- 晶体管类型:NPN - 预偏压 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:50V 电阻器 - 基极 (R1)（欧）:47k 电阻器 - 发射极 (R2)（欧）:47k 在某 Ic、Vce 时的最小直流电流增益 (hFE):70 @ 5mA，5V Ib、Ic条件下的Vce饱和度（最大）:300mV @ 500µA，10mA 电流 - 集电极截止（最大）:- 频率 - 转换:100MHz 功率 - 最大:250mW 安装类型:表面贴装 封装/外壳:SC-70，SOT-323 供应商设备封装:PG-SOT323-3 包装:带卷 (TR) 其它名称:SP000756242 |
| UNR521F | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
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