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参数资料
| 型号： | UN511TQ |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SMINI3-G1, SC-70, 3 PIN |
| 文件页数： | 5/17页 |
| 文件大小： | 440K |
| 代理商： | UN511TQ |
13
UNR511x Series
SJH00022BED
Characteristics charts of UNR511L
IC VCE
VCE(sat) IC
hFE IC
0
–12
– 2
–10
–4
–8
–6
240
200
160
120
80
40
Collector-emitter voltage V
CE (V)
Collector
current
I
C
(mA
)
Ta
= 25°C
IB =
1.0 mA
0.2 mA
0.4 mA
0.6 mA
0.8 mA
0.01
1
0.1
1
10
100
10
100
1000
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (mA)
IC / IB
= 10
Ta
= 75°C
25
°C
25°C
0
1
240
200
160
120
80
40
10
100
1000
Forward
current
transfer
ratio
h
FE
Collector current I
C (mA)
VCE
= 10 V
Ta
= 75°C
25
°C
25°C
Cob VCB
VIN IO
0
1
6
5
4
3
2
1
10
100
f
= 1 MHz
IE
= 0
Ta
= 25°C
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
Collector-base voltage V
CB (V)
0.01
0.1
1
10
100
1
10
100
Input
voltage
V
IN
(V
)
Output current I
O (mA)
VO
= 0.2 V
Ta
= 25°C
Characteristics charts of UNR511M
IC VCE
VCE(sat) IC
hFE IC
0
12
2
10
4
8
6
240
200
160
120
80
40
Collector-emitter voltage V
CE (V)
Collector
current
I
C
(mA
)
Ta
= 25°C
IB
= 1.0 mA
0.2 mA
0.1 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
0
1
100
200
300
500
400
10
100
1000
Forward
current
transfer
ratio
h
FE
Collector current I
C (mA)
VCE
= 10 V
Ta
= 75°C
25
°C
25°C
0.001
1
0.01
0.1
1
10
100
1000
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (mA)
IC / IB = 10
Ta
= 75°C
25
°C
25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| UN511V | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
| UN511Z | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UN5154 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
| UN5210 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UN5210Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70 |
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