参数资料
型号: UPA2590T1H-T2-AT
厂商: Renesas Electronics America
文件页数: 10/13页
文件大小: 0K
描述: MOSFET N/P-CH 30V 8VSOF
标准包装: 3,000
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 4.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 50 毫欧 @ 2A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 1mA
闸电荷(Qg) @ Vgs: 6.6nC @ 10V
输入电容 (Ciss) @ Vds: 310pF @ 10V
功率 - 最大: 1.24W
安装类型: 表面贴装
封装/外壳: 8-WSOF
供应商设备封装: 8-VSOF
包装: 带卷 (TR)
μ PA2590
(2) P-channel MOSFET
120
100
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
2
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Mounted on FR-4 board of
25.4 mm x 25.4 mm x 0.8 mmt
1.5
80
1 unit, 5 s
60
40
1
2 units, 5 s
0.5
20
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
-100
T A - Ambient Temperature - ° C
FORWARD BIAS SAFE OPERATING AREA
T A - Ambient Temperature - ° C
n)
DS
(V
it e )
= ?
-10
R
(o
GS
Lim V
1 i 0
d
I D(pulse)
PW
=3
00
μ s
-1
-0.1
I D(DC)
Single Pulse
Mounted on FR-4 board of
25.4 mm x 25.4 mm x 0.8 mmt
1 ms
10 ms
100 ms
5s
P D (FET1) : P D (FET2) = 1 : 1
-0.01
-0.1
-1
-10
-100
V DS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
P D (FET1) : P D (FET2) = 1 : 1
100
P D (FET1) : P D (FET2) = 0 : 1
10
Single Pulse
Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
8
Data Sheet G19217EJ1V0DS
相关PDF资料
PDF描述
UPA2716AGR-E1-AT MOSFET LV 8SOP
UPA2719AGR-E1-AT MOSFET LV 8SOP
UPA2731UT1A-E1-AY MOSFET P-CH 30V 8-HVSON
UPA2732UT1A-E1-AY MOSFET LV 8HVSON
UPA2755AGR-E2-AT MOSFET N-CH DUAL 30V 8-SOIC
相关代理商/技术参数
参数描述
UPA2593T1H-T1-AT 制造商:Renesas Electronics Corporation 功能描述:
UPA2600T1R 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 m
UPA2600T1R-E2-AX 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel
UPA2630T1R 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-CHANNEL MOSFET -12 V, -7.0 A, 28 m
UPA2630T1R-E2-AX 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET P-CH 12V 7A 6SON