参数资料
型号: UPA2590T1H-T2-AT
厂商: Renesas Electronics America
文件页数: 3/13页
文件大小: 0K
描述: MOSFET N/P-CH 30V 8VSOF
标准包装: 3,000
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 4.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 50 毫欧 @ 2A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 1mA
闸电荷(Qg) @ Vgs: 6.6nC @ 10V
输入电容 (Ciss) @ Vds: 310pF @ 10V
功率 - 最大: 1.24W
安装类型: 表面贴装
封装/外壳: 8-WSOF
供应商设备封装: 8-VSOF
包装: 带卷 (TR)

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2590
N- AND P-CHANNEL MOSFET
FOR SWITCHING
DESCRIPTION
The μ PA2590 is N- and P-channel MOSFETs designed for
DC/DC converters and power management applications of
PACKAGE DRAWING (Unit: mm)
2.9 ± 0.1
portable equipments.
8
0.65
5
A
0.17 ± 0.05
N- and P-channel MOSFETs are assembled in one package, to
contribute minimize the equipments.
FEATURES
0 to 0.025
? 4.5 V drive available
? Low on-state resistance
N-channel R DS(on)1 = 50 m Ω MAX. (V GS = 10 V, I D = 2 A)
R DS(on)2 = 83 m Ω MAX. (V GS = 4.5 V, I D = 2 A)
P-channel R DS(on)1 = 72 m Ω MAX. (V GS = ? 10 V, I D = ? 2 A)
R DS(on)2 = 105 m Ω MAX. (V GS = ? 4.5 V, I D = ? 2 A)
0.32 ± 0.05
S
1
4
0.05 M S A
N-channel 1: Source
2: Gate
7, 8: Drain
P-channel 3: Source
4: Gate
5, 6: Drain
? Built-in gate protection diode
? Small and surface mount package (8-pin VSOF (2429))
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
μ PA2590T1H-T1-AT
μ PA2590T1H-T2-AT
Note
Note
Pure Sn
8 mm embossed taping
3000 p/reel
8-pin VSOF (2429)
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
Marking: 2590
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19217EJ1V0DS00 (1st edition)
Date Published May 2008 NS
Printed in Japan
2008
相关PDF资料
PDF描述
UPA2716AGR-E1-AT MOSFET LV 8SOP
UPA2719AGR-E1-AT MOSFET LV 8SOP
UPA2731UT1A-E1-AY MOSFET P-CH 30V 8-HVSON
UPA2732UT1A-E1-AY MOSFET LV 8HVSON
UPA2755AGR-E2-AT MOSFET N-CH DUAL 30V 8-SOIC
相关代理商/技术参数
参数描述
UPA2593T1H-T1-AT 制造商:Renesas Electronics Corporation 功能描述:
UPA2600T1R 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 m
UPA2600T1R-E2-AX 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel
UPA2630T1R 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-CHANNEL MOSFET -12 V, -7.0 A, 28 m
UPA2630T1R-E2-AX 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET P-CH 12V 7A 6SON