- 您现在的位置：买卖IC网 > PDF目录376421 > UPA2755GR (NEC Corp.) SWITCHING N-CHANNEL POWER MOSFET PDF资料下载
参数资料
| 型号： | UPA2755GR |
| 厂商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 开关N沟道功率MOSFET |
| 文件页数： | 1/7页 |
| 文件大小： | 94K |
| 代理商： | UPA2755GR |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
μ
PA2755GR
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. G16639EJ1V0DS00 (1st edition)
Date Published November 2003 NS CP(K)
Printed in Japan
2003
DESCRIPTION
The
μ
PA2755GR is Dual N-channel MOS Field Effect
Transistor designed for DC/DC converters and power
management applications of notebook computers.
FEATURES
Dual chip type
Low on-state resistance
R
DS(on)1
= 18 m
MAX. (V
GS
= 10
V, I
D
= 4.0
A)
R
DS(on)2
= 29 m
MAX. (V
GS
= 4.5
V, I
D
= 4.0 A)
Low C
iss
: C
iss
= 650 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA2755GR
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (1 unit)
Note2
Total Power Dissipation (2 units)
Note2
Channel Temperature
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
I
AS
E
AS
30
±20
±8.0
±32
1.7
2.0
150
V
V
A
A
W
W
°C
°C
A
mJ
55 to +150
8
6.4
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 2000 mm
2
x 2.2 mm
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
, V
GS
= 20
→
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 MAX.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 MAX.
0.10
1
4
8
5
1
2
7, 8: Drain 1
3
: Source 2
4
: Gate 2
5, 6: Drain 2
: Source 1
EQUIVALENT CIRCUIT
(1/2 circuit)
Drain
Source
Body
Diode
Gate
Protection
Diode
Gate
相关PDF资料 |
PDF描述 |
|---|---|
| UPA2757GR | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| UPA2757GR-E1-AT | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| UPA2757GR-E2-AT | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| UPA2790GR | SWITCHING N- AND P-CHANNEL POWER MOS FET |
| UPA2791GR | MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| UPA2755GR-A1-E2-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2755GR-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2755GR-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2756GR | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| UPA2756GR-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。