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参数资料
| 型号： | UPA2755GR |
| 厂商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 开关N沟道功率MOSFET |
| 文件页数： | 3/7页 |
| 文件大小： | 94K |
| 代理商： | UPA2755GR |
Data Sheet G16639EJ1V0DS
3
μ
PA2755GR
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
d
0
0
20
40
60
80
100
120
140
160
20
40
60
80
100
T
A
- Ambient Temperature -
°
C
T
0
0
20
40
60
80
100
120
140
160
Mounted on ceramic
substrate of
2000 mm
2
×
2.2 mm
2 units
1 unit
0.4
0.8
1.2
1.6
2.0
2.4
2.8
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
I
D
0.01
0.1
1
10
100
0.01
0.1
1
10
100
I
D(pulse)
10 ms
Power Dissipation Limited
I
D(DC)
PW = 100
μ
s
1 ms
DC
R
DS(on)
Limited
(at V
GS
= 10 V)
100 ms
T
A
= 25°C
Single pulse
Mounted on ceramic substrate of
2000 mm
2
x 2.2mm, 1 unit
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
°
C
0.1
100
μ
1
10
100
1000
Mounted on ceramic substrate of 2000 mm
2
x 2.2 mm
Single pulse, 1 unit
T
A
= 25°C
R
th(ch-A)
= 73.5°C/W
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
相关PDF资料 |
PDF描述 |
|---|---|
| UPA2757GR | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| UPA2757GR-E1-AT | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| UPA2757GR-E2-AT | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| UPA2790GR | SWITCHING N- AND P-CHANNEL POWER MOS FET |
| UPA2791GR | MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| UPA2755GR-A1-E2-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2755GR-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2755GR-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2756GR | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| UPA2756GR-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
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