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参数资料
| 型号： | UPA2755GR |
| 厂商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 开关N沟道功率MOSFET |
| 文件页数： | 4/7页 |
| 文件大小： | 94K |
| 代理商： | UPA2755GR |
Data Sheet G16639EJ1V0DS
4
μ
PA2755GR
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
5
10
15
20
25
30
35
40
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Pulsed
V
GS
= 10 V
4.5 V
V
DS
- Drain to Source Voltage - V
I
D
0.0001
0.001
0.01
0.1
1
10
100
0
1
2
3
4
5
V
DS
= 10 V
Pulsed
T
A
= 150°C
75°C
25°C
40°C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
0
0.5
1
15
2
2.5
3
-50
-25
0
25
50
75
100
125
150
175
V
DS
= 10 V
I
D
= 1mA
T
ch
- Channel Temperature -
°
C
|
f
0.01
0.1
1
10
0.01
0.1
1
10
100
V
DS
= 10 V
Pulsed
T
A
=
40°C
25°C
75°C
150°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
0
10
20
30
40
50
1
10
100
V
GS
= 10 V
Pulsed
V
GS
= 4.5 V
10 V
I
D
- Drain Current – A
R
D
0
20
40
60
0
5
10
15
20
Pulsed
I
D
= 4.0 A
8.0 A
V
GS
- Gate to Source Voltage - V
相关PDF资料 |
PDF描述 |
|---|---|
| UPA2757GR | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| UPA2757GR-E1-AT | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| UPA2757GR-E2-AT | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| UPA2790GR | SWITCHING N- AND P-CHANNEL POWER MOS FET |
| UPA2791GR | MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| UPA2755GR-A1-E2-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2755GR-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2755GR-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2756GR | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| UPA2756GR-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
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