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参数资料
| 型号： | UPA2757GR-E2-AT |
| 厂商： | Renesas Electronics America |
| 文件页数： | 5/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V 8-SOIC |
| 标准包装： | 2,500 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 36 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 400pF @ 10V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-PSOP |
| 包装： | 带卷 (TR) |
μ PA2757GR
ELECTRICAL CHARACTERISTICS (T A = 25 ° C. All terminals are connected.)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Note
Forward Transfer Admittance
SYMBOL
I DSS
I GSS
V GS(off)
| y fs |
TEST CONDITIONS
V DS = 30 V, V GS = 0 V
V GS = ± 16 V, V DS = 0 V
V DS = 10 V, I D = 1 mA
V DS = 10 V, I D = 3 A
MIN.
1.0
2.0
TYP.
MAX.
10
± 10
2.5
UNIT
μ A
μ A
V
S
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Note
R DS(on)1
R DS(on)2
C iss
C oss
C rss
t d(on)
t r
t d(off)
V GS = 10 V, I D = 3.0 A
V GS = 4.5 V, I D = 3.0 A
V DS = 10 V,
V GS = 0 V,
f = 1 MHz
V DD = 15 V, I D = 3 A,
V GS = 10 V,
R G = 10 Ω
28.5
36.0
400
80
50
7
4
21
36.0
50.0
m Ω
m Ω
pF
pF
pF
ns
ns
ns
Fall Time
t f
5
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Q G
Q GS
Q GD
I D = 5 A,
V DD = 24 V,
V GS = 10 V
10
1.5
2.7
nC
nC
nC
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
V F(S-D)
t rr
Q rr
I F = 5 A, V GS = 0 V
I F = 5 A, V GS = 0 V,
di/dt = 50 A/ μ s
0.86
20
16
V
ns
nC
Note Pulsed
<R>
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
PG.
V GS = 20 → 0 V
D.U.T.
R G = 25 Ω
50 Ω
L
V DD
PG.
D.U.T.
R G
R L
V DD
V GS
Wave Form
V GS
0
V DS
10%
V GS
90%
90%
90%
V DD
I D
I AS
BV DSS
V DS
V GS
0
τ
V DS
Wave Form
V DS
0
t d(on)
10%
t r
10%
t d(off)
t f
Starting T ch
τ = 1 μ s
Duty Cycle ≤ 1%
t on
t off
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I G = 2 mA
R L
PG.
50 Ω
V DD
Data Sheet G18206EJ2V0DS
3
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相关代理商/技术参数 |
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| UPA2761UGR | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
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| UPA2762UGR | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
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