参数资料
型号: UPA2757GR-E2-AT
厂商: Renesas Electronics America
文件页数: 8/10页
文件大小: 0K
描述: MOSFET N-CH DUAL 30V 8-SOIC
标准包装: 2,500
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 5A
开态Rds(最大)@ Id, Vgs @ 25° C: 36 毫欧 @ 3A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 1mA
闸电荷(Qg) @ Vgs: 10nC @ 10V
输入电容 (Ciss) @ Vds: 400pF @ 10V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.173",4.40mm 宽)
供应商设备封装: 8-PSOP
包装: 带卷 (TR)
μ PA2757GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
80
60
40
20
0
I D = 3.0 A
Pulsed
V GS = 4.5 V
10 V
100
10
V GS = 0 V
f = 1 MHz
C iss
C oss
C rss
-50
0
50
100
150
0.01
0.1
1
10
100
T ch - Channel Temperature - ° C
SWITCHING CHARACTERISTICS
V DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
V DD = 15 V
30
12
t d(off)
V GS = 10 V
R G = 10 Ω
25
20
V DD = 24 V
15 V
6V
10
8
10
t f
t d(on)
15
10
V GS
6
4
t r
1
5
0
V DS
I D = 5 A
2
0
0.1
1
10
100
0
2
4
6
8
10
12
I D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
10
100
Q G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
V GS = 4.5 V
0V
1
10
0.1
0.01
0.001
Pulsed
1
V GS = 0 V
di/dt = 50 A/ μ s
0
0.5
1
1.5
0.1
1
10
100
6
V F(S-D) - Source to Drain Voltage - V
Data Sheet G18206EJ2V0DS
I F - Diode Forward Current - A
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