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参数资料
| 型号： | UPA611TA-T2-A |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V SC74-6 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 100mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 欧姆 @ 10mA，10V |
| 输入电容 (Ciss) @ Vds： | 9pF @ 3V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | SC-74-6，（迷你型） |
| 包装： | 带卷 (TR) |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA611TA
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The μ PA611TA is a switching device which can be driven directly by a
PACKAGE DRAWING (Unit : mm)
2.5-V power source.
The μ PA611TA has excellent switching characteristics, and is suitable for
+0.1
0.32 –0.05
+0.1
0.16 –0.06
use as a high-speed switching device in digital circuits.
0 to 0.1
FEATURES
? Can be driven by a 2.5-V power source
? Low gate cut-off voltage
0.95 0.95
1.9
2.9 ±0.2
0.8
1.1 to 1.4
ORDERING INFORMATION
PART NUMBER
PACKAGE
EQUIVALENT CIRCUIT
(1/2 Circuit)
μ PA611TA
SC-74 (Mini Mold)
Gate
Drain
Internal
Diode
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
Gate
Drain to Source Voltage
Gate to Source Voltage
V DSS
V GSS
30
±20
V
V
Protection
Diode
Source
Drain Current (DC)
I D(DC)
±0.1
A
PIN CONNECTION (Top View)
Drain Current (pulse)
Note
I D(pulse)
±0.4
A
Total Power Dissipation
Channel Temperature
Storage Temperature
P T
T ch
T stg
300 (TOTAL)
150
–55 to +150
mW
°C
°C
6
5
4
1. Source 1
2. Source 2
3. Gate 2
4. Drain 2
Note PW ≤ 10 μ s, Duty Cycle ≤ 1 %
1
2
3
5. Gate 1
6. Drain 1
Marking : IB
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D11707EJ2V0DS00 (2nd edition)
Date Published September 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
1999
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
相关PDF资料 |
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| UPA620 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:UPA620TT Data Sheet | Data Sheet[09/2002] |
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| UPA621 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:UPA621TT Data Sheet | Data Sheet[06/2002] |
| UPA621TT | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA621TT-E1-A | 功能描述:MOSFET N-CH 20V 6-WSOF RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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