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参数资料
型号： UPSD3212CV-24U6
厂商： 意法半导体
英文描述： Flash Programmable System Devices with 8032 MCU with USB and Programmable Logic
中文描述： 闪存可编程系统设备与8032具有USB和可编程逻辑控制器
文件页数： 84/163页
文件大小： 2844K
代理商： UPSD3212CV-24U6
uPSD3212A, uPSD3212C, uPSD3212CV
84/163
Table 78. Transceiver DC Characteristics
Note: 1. V
CC
= 5V ± 10%; V
SS
= 0V; T
A
= 0 to 70°C.
2. Level guaranteed for range of V
CC
= 4.5V to 5.5V.
3. With RPU, external idle resistor, 7.5
κ
±2%, D- to V
CC
.
Table 79. Transceiver AC Characteristics
Note: 1. V
CC
= 5V ± 10%; V
SS
= 0V; T
A
= 0 to 70°C.
2. Level guaranteed for range of V
CC
= 4.5V to 5.5V.
3. With RPU, external idle resistor, 7.5
κ
±2%, D- to V
CC
.
4. C
L
of 50pF(75ns) to 350pF (300ns).
5. Measured at crossover point of differential data signals.
6. USB specification indicates 330ns.
Symb
Parameter
Test Conditions
(1)
Min
Max
Unit
V
OH
Static Output High
15k
± 5% to GND
(2,3)
2.8
3.6
V
V
OL
Static Output Low
Notes 2, 3
—
0.3
V
V
DI
Differential Input Sensitivity
|(D+) - (D-)|,
Figure 43., page 86
0.2
—
V
V
CM
Differential Input Common Mode
Figure 43., page 86
0.8
2.5
V
V
SE
Single Ended Receiver Threshold
—
0.8
2.0
V
C
IN
Transceiver Capacitance
—
—
20
pF
I
IO
Data Line (D+, D-) Leakage
0V < (D+,D-) < 3.3
–10
10
μA
R
PU
External Bus Pull-up Resistance, D-
7.5k
± 2% to V
CC
7.35
7.65
k
R
PD
External Bus Pull-down Resistance
15k
± 5%
14.25
15.75
k
Symb
Parameter
Test Conditions
(1)
Min
Max
Unit
tDRATE
Low Speed Data Rate
Ave. bit rate (1.5Mb/s ± 1.5%)
1.4775
1.5225
Mbit/s
tDJR1
Receiver Data Jitter Tolerance
To next transition,
Figure 43., page 86
(5)
–75
75
ns
tDJR2
Differential Input Sensitivity
For paired transition,
Figure 43., page 86
(5)
–45
45
ns
tDEOP
Differential to EOP Transition Skew
Figure 44., page 87
(5)
–40
100
ns
tEOPR1
EOP Width at Receiver
Rejects as EOP
(5,6)
165
—
ns
tEOPR2
EOP Width at Receiver
Accepts as EOP
(5)
675
—
ns
tEOPT
Source EOP Width
—
–1.25
1.50
μs
tUDJ1
Differential Driver Jitter
To next transition,
Figure 45., page 87
–95
95
ns
tUDJ2
Differential Driver Jitter
To paired transition,
Figure 45., page 87
–150
150
ns
tR
USB Data Transition Rise Time
Notes 2, 3, 4
75
300
ns
tF
USB Data Transition Fall Time
Notes 2, 3, 4
75
300
ns
tRFM
Rise/Fall Time Matching
t
R
/ t
F
80
120
%
VCRS
Output Signal Crossover Volt age
—
1.3
2.0
V
相关PDF资料
PDF描述
uPSD3212C Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM(带8032微控制器内核和16Kbit SRAM的FLASH可编程系统器件)
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相关代理商/技术参数
参数描述
UPSD3212CV-24U6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Flash Programmable System Devices with 8032 MCU with USB and Programmable Logic
UPSD3212CV-40T1T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM
UPSD3212CV-40T6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Flash Programmable System Devices with 8032 MCU with USB and Programmable Logic
UPSD3212CV-40U1T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM
UPSD3212CV-40U6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Flash Programmable System Devices with 8032 MCU with USB and Programmable Logic
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