参数资料
型号: V54C3256404VDT7
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封装: 0.400 INCH, PLASTIC, TSOP2-54
文件页数: 18/56页
文件大小: 719K
代理商: V54C3256404VDT7
25
V54C3256(16/80/40)4VD Rev. 1.9 August 2008
ProMOS TECHNOLOGIES
V54C3256(16/80/40)4VD
5. Burst Write Operation
(Burst Length = 4, CAS latency = 2, 3)
6.1 Write Interrupted by a Write
(Burst Length = 4, CAS latency = 2, 3)
COMMAND
NOP
WRITE A
NOP
I/O’s
DIN A0
DIN A1
DIN A2
DIN A3
NOP
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
Extra data is ignored after
The first data element and the Write
are registered on the same clock edge.
termination of a Burst.
don’t care
COMMAND
NOP
WRITE A
WRITE B
NOP
I/O’s
DIN A0
DIN B0
DIN B1
DIN B2
NOP
DIN B3
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
1 Clk Interval
tCCD
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相关代理商/技术参数
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