参数资料
型号: V55C2256164VBT10I
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 16M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54
封装: 0.400 INCH, PLASTIC, TSOP2-54
文件页数: 8/46页
文件大小: 575K
代理商: V55C2256164VBT10I
16
V55C2256164VB Rev. 1.2 May 2007
ProMOS TECHNOLOGIES
V55C2256164VB
Timing Diagrams
1. Bank Activate Command Cycle
2. Burst Read Operation
3. Read Interrupted by a Read
4. Read to Write Interval
4.1 Read to Write Interval
4.2 Minimum Read to Write Interval
4.3 Non-Minimum Read to Write Interval
5. Burst Write Operation
6. Write and Read Interrupt
6.1 Write Interrupted by a Write
6.2 Write Interrupted by Read
7. Burst Write & Read with Auto-Precharge
7.1 Burst Write with Auto-Precharge
7.2 Burst Read with Auto-Precharge
8. Burst Termination
8.1 Termination of a Burst Write Operation
8.2 Termination of a Burst Write Operation
9. AC- Parameters
9.1 AC Parameters for a Write Timing
9.2 AC Parameters for a Read Timing
10. Mode Register Set
11. Power on Sequence and Auto Refresh (CBR)
12. Power Down Mode
13. Self Refresh (Entry and Exit)
14. Auto Refresh (CBR)
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