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参数资料
| 型号： | VEMD2000X01 |
| 厂商： | Vishay Semiconductors |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | PHOTODIODE PIN 940NM REV GWING |
| 标准包装： | 1 |
| 波长： | 940nm |
| 光谱范围： | 750nm ~ 1050nm |
| 二极管类型： | 引脚 |
| 响应时间： | 100ns |
| 电压 - (Vr)（最大）： | 60V |
| 电流 - 暗（标准）： | 1nA |
| 有效面积： | 0.23mm² |
| 视角： | 30° |
| 工作温度： | -40°C ~ 100°C |
| 封装/外壳： | 2-SMD，Z形弯曲d |
| 其它名称： | VEMD2000X01DKR |
VEMD2000X01, VEMD2020X01
www.vishay.com
BASIC CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)
Vishay Semiconductors
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
Breakdown voltage
I F = 50 mA
I R = 100 μA, E = 0
V F
V (BR)
32
1
V
V
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of V o
Short circuit current
Temperature coefficient of I k
V R = 10 V, E = 0
V R = 0 V, f = 1 MHz, E = 0
V R = 5 V, f = 1 MHz, E = 0
E e = 1 mW/cm 2 , λ = 950 nm
E e = 1 mW/cm 2 , λ = 950 nm
E e = 1 mW/cm 2 , λ = 950 nm
E e = 1 mW/cm 2 , λ = 950 nm
I ro
C D
C D
V o
TK Vo
I k
TK Ik
1
4
1.3
350
- 2.6
11
0.1
10
nA
pF
pF
mV
mV/K
μA
%/K
Reverse light current
E e = 1 mW/cm 2 , λ = 950 nm,
V R = 5 V
I ra
8.5
12
17
μA
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
?
λ p
λ 0.5
± 15
940
750 to 1050
deg
nm
nm
Rise time
Fall time
V R = 10 V, R L = 1 k Ω ,
λ = 820 nm
V R = 10 V, R L = 1 k Ω ,
λ = 820 nm
t r
t f
100
100
ns
ns
BASIC CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)
1000
1.4
100
1.2
V R = 5 V
λ = 950 nm
1.0
10
V R = 10 V
0.8
1
20
40
60
80
100
0.6
0
20
40
60
80
100
94 8427
T amb - Ambient Temperature (°C)
94 8416
T amb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.3, 23-Aug-11
2
Document Number: 81962
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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