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参数资料
| 型号： | VEMD2000X01 |
| 厂商： | Vishay Semiconductors |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | PHOTODIODE PIN 940NM REV GWING |
| 标准包装： | 1 |
| 波长： | 940nm |
| 光谱范围： | 750nm ~ 1050nm |
| 二极管类型： | 引脚 |
| 响应时间： | 100ns |
| 电压 - (Vr)（最大）： | 60V |
| 电流 - 暗（标准）： | 1nA |
| 有效面积： | 0.23mm² |
| 视角： | 30° |
| 工作温度： | -40°C ~ 100°C |
| 封装/外壳： | 2-SMD，Z形弯曲d |
| 其它名称： | VEMD2000X01DKR |
VEMD2000X01, VEMD2020X01
www.vishay.com
REFLOW SOLDER PROFILE
Vishay Semiconductors
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
300
250
200
255 °C
240 °C
217 °C
max. 26 0 °C
245 °C
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
150
max. 30 s
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
100
max. 120 s
max. 100 s
Conditions: T amb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
50
0
max. ramp up 3 °C/s max. ramp down 6 °C/s
DRYING
In case of moisture absorption devices should be baked
0
50
100
150
200
250
300
before soldering. Conditions see J-STD-020 or label.
19841
Time (s)
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D
PACKAGE DIMENSIONS in millimeters: VEMD2000
0.4
2.2
Z
? 1.8 ± 0.1
2.2
5.8 ± 0.2
Z 20:1
1.1 ± 0.1
2.3 ± 0.2
expo s ed copper
Cathode
Pin ID
Anode
technical drawing s
1.7
S older pad propo s al
according to DIN
s pecification s
acc. IPC 7351
Not indicated tolerance s ± 0.1
? 2.3 ± 0.1
6.7
Drawing-No.: 6.544-5391.02-4
I ss ue: 2; 18.03.10
21517
Rev. 1.3, 23-Aug-11
4
Document Number: 81962
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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| VEMD2500X01 | 功能描述:光电二极管 PHOTO PIN DIODE RoHS:否 制造商:Vishay Semiconductors 产品:Photodiodes 反向电压:10 V 最大暗电流:30 nA 峰值波长:565 nm 上升时间:3.1 us 下降时间:3 us 半强度角度:50 deg 封装 / 箱体:TO-5 |
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