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参数资料
型号： VNL5050S5-E
厂商： STMICROELECTRONICS
元件分类： 电源管理
英文描述： POWER SUPPLY SUPPORT CKT, PDSO8
封装： ROHS COMPLIANT, SOP-8
文件页数： 1/32页
文件大小： 490K
代理商： VNL5050S5-E
November 2009
Doc ID 15917 Rev 4
1/32
1
VNL5050N3-E
VNL5050S5-E
OMNIFET III
fully protected low-side driver
Features
■ Drain current: 19 A
■ ESD protection
■ Overvoltage clamp
■ Thermal shutdown
■ Current and power limitation
■ Very low standby current
■ Very low electromagnetic susceptibility
■ In compliance with the 2002/95/EC european
directive
■ Open drain status output(a)
Description
The VNL5050N3-E and VNL5050S5-E are
monolithic devices made using
STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side connected to the battery. Built-in
thermal shutdown protects the chip from
overtemperature and short-circuit. Output current
limitation protects the devices in an overload
condition. In case of long duration overload, the
device limits the dissipated power to a safe level
up to thermal shutdown intervention.Thermal
shutdown, with automatic restart, allows the
device to recover normal operation as soon as a
fault condition disappears. Fast demagnetization
of inductive loads is achieved at turn-off.
Type
Vclamp
RDS(on)
ID
VNL5050N3-E
41 V
50 m
Ω
19 A
VNL5050S5-E
a.
Valid for VNL5050S5-E only
1
2
3
SOT-223
SO-8
Table 1.
Devices summary
Package
Order codes
Tube
Tape & reel
SOT-223
VNL5050N3-E
VNL5050N3TR-E
SO-8
VNL5050S5-E
VNL5050S5TR-E
www.st.com
相关PDF资料
PDF描述
VNL5050N3TR-E POWER SUPPLY SUPPORT CKT, PDSO3
VO27.0000000M0000001 VCXO, CLOCK, 27 MHz, TTL OUTPUT
VP06DDC1R0N999 0.3 W, SMPS TRANSFORMER
VP06DDC1R0N001 0.3 W, SMPS TRANSFORMER
VP06DDC1R0M999 0.3 W, SMPS TRANSFORMER
相关代理商/技术参数
参数描述
VNL5050S5TR-E 功能描述:功率驱动器IC 19A OMNIFET RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
VNL5090N3TR-E 功能描述:功率驱动器IC OMNIFET III Low Side 13A 41V 90mOhm RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
VNL5090S5TR-E 功能描述:功率驱动器IC OMNIFET III Driver Low-Side ESD VIPower RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
VNL5160N3-E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:OMNIFET III fully protected low-side driver
VNL5160N3TR-E 功能描述:功率驱动器IC Double Ch High Side Driver analog currnt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
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