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| 型号： | W25Q128BVEIG |
| 厂商： | Winbond Electronics |
| 文件页数： | 12/74页 |
| 文件大小： | 0K |
| 描述： | IC SPI FLASH 128MBIT 8WSON |
| 标准包装： | 63 |
| 系列： | SpiFlash® |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 128M（16M x 8） |
| 速度： | 104MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WSON（8x6） |
| 包装： | 管件 |
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W25Q128BV
rising edge of the /HOLD signal if the CLK signal is already low. If the CLK is not already low the /HOLD
condition will terminate after the next falling edge of CLK. During a /HOLD condition, the Serial Data
Output (DO) is high impedance, and Serial Data Input (DI) and Serial Clock (CLK) are ignored. The Chip
Select (/CS) signal should be kept active low for the full duration of the /HOLD operation to avoid resetting
the internal logic state of the device.
6.2
WRITE PROTECTION
Applications that use non-volatile memory must take into consideration the possibility of noise and other
adverse system conditions that may compromise data integrity. To address this concern, the
W25Q128BV provides several means to protect the data from inadvertent writes.
6.2.1
Write Protect Features
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Device resets when VCC is below threshold
Time delay write disable after Power-up
Write enable/disable instructions and automatic write disable after erase or program
Software and Hardware (/WP pin) write protection using Status Register
Write Protection using Power-down instruction
Lock Down write protection until next power-up
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One Time Program (OTP) write protection
*
* Note: This feature is available upon special order. Please contact Winbond for details .
Upon power-up or at power-down, the W25Q128BV will maintain a reset condition while VCC is below
the threshold value of V WI , (See Power-up Timing and Voltage Levels and Figure 38). While reset, all
operations are disabled and no instructions are recognized. During power-up and after the VCC voltage
exceeds V WI , all program and erase related instructions are further disabled for a time delay of t PUW . This
includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase and the Write Status
Register instructions. Note that the chip select pin (/CS) must track the VCC supply level at power-up until
the VCC-min level and t VSL time delay is reached. If needed a pull-up resister on /CS can be used to
accomplish this.
After power-up the device is automatically placed in a write-disabled state with the Status Register Write
Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before a Page Program, Sector
Erase, Block Erase, Chip Erase or Write Status Register instruction will be accepted. After completing a
program, erase or write instruction the Write Enable Latch (WEL) is automatically cleared to a write-
disabled state of 0.
Software controlled write protection is facilitated using the Write Status Register instruction and setting
the Status Register Protect (SRP0, SRP1) and Block Protect (CMP, SEC, TB, BP2, BP1 and BP0) bits.
These settings allow a portion as small as 4KB sector or the entire memory array to be configured as
read only. Used in conjunction with the Write Protect (/WP) pin, changes to the Status Register can be
enabled or disabled under hardware control. See Status Register section for further information.
Additionally, the Power-down instruction offers an extra level of write protection as all instructions are
ignored except for the Release Power-down instruction.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W25Q128BVEIG TR | 制造商:Winbond Electronics Corp 功能描述:SPIFLASH, 128M-BIT, 4KB UNIFOR |
| W25Q128BVEIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q128BVFIG | 制造商:Winbond Electronics Corp 功能描述:Flash Serial-SPI 3.3V 128Mbit 16M x 8bit 8.5ns 16-Pin SOIC 制造商:Winbond Electronics Corp 功能描述:128MB SPI FLASH |
| W25Q128BVFIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q128FV | 制造商:WINBOND 制造商全称:Winbond 功能描述:SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI |
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