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参数资料
| 型号： | W25Q16BVDAIG |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 2M X 8 SPI BUS SERIAL EEPROM, PDIP8 |
| 封装： | 0.300 INCH, GREEN, PLASTIC, DIP-8 |
| 文件页数： | 16/68页 |
| 文件大小： | 2055K |
| 代理商： | W25Q16BVDAIG |
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W25Q16BV
Publication Release Date: July 08, 2010
- 23 -
Revision F
11.2.8 Write Status Register (01h)
The Write Status Register instruction allows the Status Register to be written. A Write Enable instruction
must previously have been executed for the device to accept the Write Status Register Instruction (Status
Register bit WEL must equal 1). Once write enabled, the instruction is entered by driving /CS low,
sending the instruction code “01h”, and then writing the status register data byte as illustrated in figure 7.
The Status Register bits are shown in figure 3 and described earlier in this datasheet.
Only non-volatile Status Register bits SRP0, SEC, TB, BP2, BP1, BP0 (bits 7, 5, 4, 3, 2 of Status
Register-1) and QE, SRP1(bits 9 and 8 of Status Register-2) can be written to. All other Status Register
bit locations are read-only and will not be affected by the Write Status Register instruction.
The /CS pin must be driven high after the eighth or sixteenth bit of data that is clocked in. If this is not
done the Write Status Register instruction will not be executed. If /CS is driven high after the eighth clock
(compatible with the 25X series) the QE and SRP1 bits will be cleared to 0. After /CS is driven high, the
self-timed Write Status Register cycle will commence for a time duration of tW (See AC Characteristics).
While the Write Status Register cycle is in progress, the Read Status Register instruction may still be
accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Register cycle
and a 0 when the cycle is finished and ready to accept other instructions again. After the Write Register
cycle has finished the Write Enable Latch (WEL) bit in the Status Register will be cleared to 0.
The Write Status Register instruction allows the Block Protect bits (SEC, TB, BP2, BP1 and BP0) to be
set for protecting all, a portion, or none of the memory from erase and program instructions. Protected
areas become read-only (see Status Register Memory Protection table and description). The Write Status
Register instruction also allows the Status Register Protect bits (SRP0, SRP1) to be set. Those bits are
used in conjunction with the Write Protect (/WP) pin, Lock out or OTP features to disable writes to the
status register. Please refer to 11.1.6 for detailed descriptions regarding Status Register protection
methods. Factory default for all status Register bits are 0.
Figure 7. Write Status Register Instruction Sequence Diagram
相关PDF资料 |
PDF描述 |
|---|---|
| W25Q16BVDAIP | 2M X 8 SPI BUS SERIAL EEPROM, PDIP8 |
| W25Q16BVSNIP | 2M X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| W25Q40BLSNIP | 4M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| W25Q80BVSFIG | 1M X 8 SPI BUS SERIAL EEPROM, PDSO16 |
| W25X32AVZPIG | 4M X 8 FLASH 2.7V PROM, PDSO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W25Q16BVDAIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q16BVSFIG | 功能描述:IC SPI FLASH 16MBIT 16SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP（0.465"，11.8mm 宽） 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8 |
| W25Q16BVSFIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q16BVSNIG | 制造商:Winbond Electronics Corp 功能描述:Flash Serial-SPI 3.3V 16Mbit 2M x 8bit 6ns 8-Pin SOIC |
| W25Q16BVSNIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
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