参数资料
型号: W25Q16CVTCAG
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 16M X 1 SPI BUS SERIAL EEPROM, PBGA24
封装: 8 X 6 MM, GREEN, TFBGA-24
文件页数: 42/79页
文件大小: 1131K
代理商: W25Q16CVTCAG
W25Q16CV
Publication Release Date: April 01, 2011
- 47 -
Revision C
7.2.27 Erase / Program Suspend (75h)
The Erase/Program Suspend instruction “75h”, allows the system to interrupt a Sector or Block Erase
operation or a Page Program operation and then read from or program/erase data to, any other sectors or
blocks. The Erase/Program Suspend instruction sequence is shown in Figure 25.
The Write Status Register instruction (01h) and Erase instructions (20h, 52h, D8h, C7h, 60h, 44h) are not
allowed during Erase Suspend. Erase Suspend is valid only during the Sector or Block erase operation. If
written during the Chip Erase operation, the Erase Suspend instruction is ignored. The Write Status
Register instruction (01h) and Program instructions (02h, 32h, 42h) are not allowed during Program
Suspend. Program Suspend is valid only during the Page Program or Quad Page Program operation.
The Erase/Program Suspend instruction “75h” will be accepted by the device only if the SUS bit in the
Status Register equals to 0 and the BUSY bit equals to 1 while a Sector or Block Erase or a Page
Program operation is on-going. If the SUS bit equals to 1 or the BUSY bit equals to 0, the Suspend
instruction will be ignored by the device. A maximum of time of “tSUS” (See AC Characteristics) is required
to suspend the erase or program operation. The BUSY bit in the Status Register will be cleared from 1 to
0 within “tSUS” and the SUS bit in the Status Register will be set from 0 to 1 immediately after
Erase/Program Suspend. For a previously resumed Erase/Program operation, it is also required that the
Suspend instruction “75h” is not issued earlier than a minimum of time of “tSUS” following the preceding
Resume instruction “7Ah”.
Unexpected power off during the Erase/Program suspend state will reset the device and release the
suspend state. SUS bit in the Status Register will also reset to 0. The data within the page, sector or block
that was being suspended may become corrupted. When the device is powered up again, it is
recommended for the user to repeat the same Erase or Program operation that was interrupted, at the
same address location, to avoid the potention data corruption.
/CS
CLK
DI
(IO
0)
DO
(IO
1)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (75h)
High Impedance
Mode 0
Mode 3
tSUS
Accept instructions
Figure 25. Erase/Program Suspend Instruction Sequence
相关PDF资料
PDF描述
WF2M32S-100HM 8M X 8 FLASH 5V PROM MODULE, 100 ns, CHIP66
WF2M32S-100HC 8M X 8 FLASH 5V PROM MODULE, 100 ns, CHIP66
WF2M32S-120GTC 8M X 8 FLASH 5V PROM MODULE, 120 ns, CQFP68
WF2M32S-80GTM 8M X 8 FLASH 5V PROM MODULE, 80 ns, CQFP68
WPS256K16VC-20LJM 256K X 16 STANDARD SRAM, 20 ns, PDSO44
相关代理商/技术参数
参数描述
W25Q16CVTCAP 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q16CVTCIG 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q16CVTCIP 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q16CVZPAG 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q16CVZPAP 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI