参数资料
型号: W25Q80BVSNAP
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 8M X 1 SPI BUS SERIAL EEPROM, PDSO8
封装: 0.150 INCH, GREEN, PLASTIC, SOIC-8
文件页数: 58/75页
文件大小: 1055K
代理商: W25Q80BVSNAP
W25Q80BV
Publication Release Date: October 06, 2010
- 61 -
Revision D
10. ELECTRICAL CHARACTERISTICS
10.1 Absolute Maximum Ratings (1)
PARAMETERS
SYMBOL
CONDITIONS
RANGE
UNIT
Supply Voltage
VCC
–0.6 to +4.0
V
Voltage Applied to Any Pin
VIO
Relative to Ground
–0.6 to VCC+0.4
V
Transient Voltage on any Pin
VIOT
<20nS Transient
Relative to Ground
–2.0V to VCC+2.0V
V
Storage Temperature
TSTG
–65 to +150
°C
Lead Temperature
TLEAD
See Note (2)
°C
Electrostatic Discharge Voltage
VESD
Human Body Model(3)
–2000 to +2000
V
Notes:
1. This device has been designed and tested for the specified operation ranges. Proper operation outside
of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability.
Exposure beyond absolute maximum ratings may cause permanent damage.
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and
the European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
3. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
10.2 Operating Ranges
SPEC
PARAMETER
SYMBOL
CONDITIONS
MIN
MAX
UNIT
Supply Voltage(1)
VCC
FR = 80MHz, fR = 50MHz
FR = 104MHz, fR = 50MHz
2.7
3.0
3.6
V
Ambient Temperature,
Operating
TA
Industrial
Automotive
-40
+85
+105
°C
Note:
1. VCC voltage during Read can operate across the min and max range but should not exceed ±10% of
the programming (erase/write) voltage.
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