参数资料
型号: W25Q80BVSNAP
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 8M X 1 SPI BUS SERIAL EEPROM, PDSO8
封装: 0.150 INCH, GREEN, PLASTIC, SOIC-8
文件页数: 60/75页
文件大小: 1055K
代理商: W25Q80BVSNAP
W25Q80BV
Publication Release Date: October 06, 2010
- 63 -
Revision D
10.4 DC Electrical Characteristics
SPEC
PARAMETER
SYMBOL CONDITIONS
MIN
TYP
MAX
UNIT
Input Capacitance
CIN(1)
VIN = 0V(1)
6
pF
Output Capacitance
Cout(1)
VOUT = 0V(1)
8
pF
Input Leakage
ILI
±2
A
I/O Leakage
ILO
±2
A
Standby Current
ICC1
/CS = VCC,
VIN = GND or VCC
25
50
A
Power-down Current
ICC2
/CS = VCC,
VIN = GND or VCC
1
5
A
Current Read Data /
Dual /Quad 1MHz(2)
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
4/5/6
6/7.5/9
mA
Current Read Data /
Dual /Quad 33MHz(2)
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
6/7/8
9/10.5/12
mA
Current Read Data /
Dual /Quad 50MHz(2)
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
7/8/9
10/12/13.5
mA
Current Read Data /
Dual Output Read/Quad
Output Read 80MHz(2)
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
10/11/12
15/16.5/18
mA
Current Write Status
Register
ICC4
/CS = VCC
8
12
mA
Current Page Program
ICC5
/CS = VCC
20
25
mA
Current Sector/Block
Erase
ICC6
/CS = VCC
20
25
mA
Current Chip Erase
ICC7
/CS = VCC
20
25
mA
Input Low Voltage
VIL
VCC x 0.3
V
Input High Voltage
VIH
VCC x 0.7
V
Output Low Voltage
VOL
IOL = 100 A
0.2
V
Output High Voltage
VOH
IOH = –100 A
VCC – 0.2
V
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3V.
2. Checker Board Pattern.
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