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参数资料
| 型号： | W25X10AVDIAZ |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 128K X 8 FLASH 2.7V PROM, PDIP8 |
| 封装： | GREEN, PLASTIC, PDIP-8 |
| 文件页数： | 18/45页 |
| 文件大小： | 1505K |
| 代理商： | W25X10AVDIAZ |
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W25X10A, W25X20A, W25X40A, W25X80A
Publication Release Date: November 25, 2008
- 25 -
Revision E
10.2.13 Chip Erase (C7h or 60h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A
Write Enable instruction must be executed before the device will accept the Chip Erase Instruction
(Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and
shifting the instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in figure
14.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip
Erase instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction
will commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in
progress, the Read Status Register instruction may still be accessed to check the status of the BUSY
bit. The BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is
ready to accept other instructions again. After the Chip Erase cycle has finished the Write Enable
Latch (WEL) bit in the Status Register is cleared to 0. The Chip Erase instruction will not be executed
if any page is protected by the Block Protect (BP2, BP1, and BP0) bits (see Status Register Memory
Protection table).
Figure 14. Chip Erase Instruction Sequence Diagram
相关PDF资料 |
PDF描述 |
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| W25X16AVDAIG | 2M X 8 FLASH 2.7V PROM, PDIP8 |
| W25X16BVZPIG | 256K X 16 FLASH 2.7V PROM, PDSO8 |
| W25X20BLSNIG | 2M X 1 FLASH 2.7V PROM, PDSO8 |
| W25X20BLZPIG | 2M X 1 FLASH 2.7V PROM, PDSO8 |
| W25X32AVDAIZ | 4M X 8 FLASH 2.7V PROM, PDIP8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W25X10AVSNIG | 功能描述:IC FLASH 16MBIT 100MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| W25X10AVZPIG | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| W25X10BL | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI |
| W25X10BLSNIG | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI |
| W25X10BLZPIG | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI |
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