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参数资料
| 型号： | W25X10AVDIAZ |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 128K X 8 FLASH 2.7V PROM, PDIP8 |
| 封装： | GREEN, PLASTIC, PDIP-8 |
| 文件页数： | 20/45页 |
| 文件大小： | 1505K |
| 代理商： | W25X10AVDIAZ |
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W25X10A, W25X20A, W25X40A, W25X80A
Publication Release Date: November 25, 2008
- 27 -
Revision E
10.2.15 Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, obtain the devices electronic identification (ID) number
or do both.
When used only to release the device from the power-down state, the instruction is issued by driving
the /CS pin low, shifting the instruction code “ABh” and driving /CS high as shown in figure 16. After
the time duration of tRES1 (See AC Characteristics) the device will resume normal operation and other
instructions will be accepted. The /CS pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated
by driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The
Device ID bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as
shown in figure 17. The Device ID values for the W25X10A, W25X20A, W25X40A and W25X80A are
listed in Manufacturer and Device Identification table. The Device ID can be read continuously. The
instruction is completed by driving /CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction
is the same as previously described, and shown in figure 17, except that after /CS is driven high it
must remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the
device will resume normal operation and other instructions will be accepted.
If the Release from Power-down / Device ID instruction is issued while an Erase, Program or Write
cycle is in process (when BUSY equals 1) the instruction is ignored and will not have any effects on
the current cycle
Figure 16. Release Power-down Instruction Sequence
相关PDF资料 |
PDF描述 |
|---|---|
| W25X16AVDAIG | 2M X 8 FLASH 2.7V PROM, PDIP8 |
| W25X16BVZPIG | 256K X 16 FLASH 2.7V PROM, PDSO8 |
| W25X20BLSNIG | 2M X 1 FLASH 2.7V PROM, PDSO8 |
| W25X20BLZPIG | 2M X 1 FLASH 2.7V PROM, PDSO8 |
| W25X32AVDAIZ | 4M X 8 FLASH 2.7V PROM, PDIP8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W25X10AVSNIG | 功能描述:IC FLASH 16MBIT 100MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| W25X10AVZPIG | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| W25X10BL | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI |
| W25X10BLSNIG | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI |
| W25X10BLZPIG | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI |
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