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参数资料
| 型号： | W29GL128CL9T |
| 厂商： | Winbond Electronics |
| 文件页数： | 7/67页 |
| 文件大小： | 0K |
| 描述： | IC FLASH 128MBIT 90NS 56TSOP |
| 标准包装： | 96 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 128M（16M x 8，8M x 16） |
| 速度： | 90ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 56-TFSOP（0.724"，18.40mm 宽） |
| 供应商设备封装： | 56-TSOP |
| 包装： | 管件 |
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W29GL128C
1
GENERAL DESCRIPTION
The W29GL128C Parallel Flash memory provides a storage solution for embedded system
applications that require better performance, lower power consumption and higher density. The device
has a random access speed of 90ns and a fast page access speed of 25ns, as well as significantly
faster program and erase time than the products available on the market today. The W29GL128C also
offers special features such as Compatible Manufacturer ID that makes the device industry standard
compatible without the need to change firmware.
2
FEATURES
? 64k-Word/128k-Byte uniform sector
architecture
– Total 128 uniform sectors
? 32-Word/64-Byte write buffer
– Reduces total program time for
multiple-word updates
? 8-Word/16-Byte page read buffer
? Secured Silicon Sector area
– Programmed and locked by the
customer or during production
– 128-word/256-byte sector for
permanent, safe identification using an
8-word/16-byte random electronic
serial number
? Enhanced Sector Protect using
Dynamic and Individual mechanisms
? Polling/Toggling methods are used to
detect the status of program and erase
operation
? Suspend and resume commands used
for program and erase operations
? More than 100,000 erase/program
cycles
? More than 20-year data retention
? Software and Hardware write
protection
– Write-Protect all or a portion of
memory
– Enable/Disable protection with #WP
pin
– Top or bottom array protection
? Low power consumption
? Deep power down mode
1
? Wide temperature range
? Compatible manufacturer ID for drop-in
replacement
– No firmware change is required
? Faster Erase and Program time
– Erase is 1.5x faster than industry
standard
– Program is 2x faster than industry
standard
– Allows for improved production
throughput and faster field updates
? CFI (Common Flash Interface) support
? Single 3V Read/Program/Erase (2.7 -
3.6V)
? Enhanced Variable IO control
– All input levels (address, control, and
DQ) and output levels are determined
by voltage on the E VIO input. E VIO
ranges from 1.65 to V CC
? #WP/ACC Input
– Accelerates programming time (when
V HH is applied) for greater throughput
during system production
– Protects first or last sector regardless
of sector protection settings
? Hardware reset input (#reset) resets
device
? Ready/#Busy output (RY/#BY) detects
completion of program or erase cycle
? Packages
– 56-pin TSOP
– 56-ball TFBGA
– 64-ball LFBGA
Publication Release Date: August 2, 2013
Revision H
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W29GL128CL9T TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 128MBIT 90NS 56TSOP |
| W29NK50ZD | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 500 V - 0.11? - 29A TO-247 Fast Diode SuperMESH? MOSFET |
| W2A-1819 | 制造商:Nexans 功能描述:MULTI CONDUCTORS |
| W2A21A101J4T2A | 功能描述:电容器阵列与网络 100v 100pF 5% Tol. RoHS:否 制造商:AVX 电容:0.1 uF 容差:20 % 电压额定值:6.3 V 元件数量:2 工作温度范围: 外壳长度:0.8 mm 外壳宽度:1.6 mm 外壳高度:0.5 mm 端接类型:SMD/SMT 系列:PG |
| W2A21A101KAT2A | 功能描述:电容器阵列与网络 100v 100pF 20% Tol. RoHS:否 制造商:AVX 电容:0.1 uF 容差:20 % 电压额定值:6.3 V 元件数量:2 工作温度范围: 外壳长度:0.8 mm 外壳宽度:1.6 mm 外壳高度:0.5 mm 端接类型:SMD/SMT 系列:PG |
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