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| 型号： | W9412G6IH-5 |
| 厂商： | Winbond Electronics |
| 文件页数： | 1/53页 |
| 文件大小： | 0K |
| 描述： | IC DDR-400 SDRAM 128MB 66TSSOPII |
| 标准包装： | 108 |
| 格式 - 存储器： | RAM |
| 存储器类型： | DDR SDRAM |
| 存储容量： | 128M（8Mx16） |
| 速度： | 250MHz |
| 接口： | 并联 |
| 电源电压： | 2.3 V ~ 2.7 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 66-TSSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 66-TSOP II |
| 包装： | 托盘 |
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W9412G6IH
2M × 4 BANKS × 16 BITS DDR SDRAM
Table of Contents-
1.
2.
3.
4.
5.
6.
7.
GENERAL DESCRIPTION ......................................................................................................... 4
FEATURES ................................................................................................................................. 4
KEY PARAMETERS ................................................................................................................... 5
PIN CONFIGURATION ............................................................................................................... 6
PIN DESCRIPTION..................................................................................................................... 7
BLOCK DIAGRAM ...................................................................................................................... 8
FUNCTIONAL DESCRIPTION.................................................................................................... 9
7.1
7.2
Power Up Sequence....................................................................................................... 9
Command Function ...................................................................................................... 10
7.2.1
7.2.2
7.2.3
7.2.4
7.2.5
7.2.6
7.2.7
7.2.8
7.2.9
7.2.10
7.2.11
7.2.12
7.2.13
7.2.14
7.2.15
7.2.16
Bank Activate Command ........................................................................... 10
Bank Precharge Command........................................................................ 10
Precharge All Command............................................................................ 10
Write Command ......................................................................................... 10
Write with Auto-precharge Command........................................................ 10
Read Command ......................................................................................... 10
Read with Auto-precharge Command ....................................................... 10
Mode Register Set Command.................................................................... 11
Extended Mode Register Set Command ................................................... 11
No-Operation Command............................................................................ 11
Burst Read Stop Command ....................................................................... 11
Device Deselect Command ....................................................................... 11
Auto Refresh Command ............................................................................ 11
Self Refresh Entry Command .................................................................... 12
Self Refresh Exit Command....................................................................... 12
Data Write Enable /Disable Command ...................................................... 12
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
Read Operation............................................................................................................. 12
Write Operation............................................................................................................. 13
Precharge ..................................................................................................................... 13
Burst Termination.......................................................................................................... 13
Refresh Operation......................................................................................................... 13
Power Down Mode ....................................................................................................... 14
Input Clock Frequency Change during Precharge Power Down Mode........................ 14
Mode Register Operation.............................................................................................. 14
Publication Release Date: Sep. 16, 2009
-1-
Revision A06
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W9412G6JH | 制造商:WINBOND 制造商全称:Winbond 功能描述:2M ? 4 BANKS ? 16 BITS DDR SDRAM |
| W9412G6JH-4 | 制造商:Winbond Electronics Corp 功能描述:8*16B DDR1 制造商:Winbond Electronics Corp 功能描述:IC DDR SDRAM 128M 250MHZ 66TSOP |
| W9412G6JH-5 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 128M-Bit 8Mx16 2.5V 66-Pin TSOP 制造商:Winbond Electronics Corp 功能描述:128M BIT DDR1 |
| W9412G6JH-5I | 功能描述:IC DDR SDRAM 128MBIT 66TSOPII RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘 |
| W9412G6JH-5TR | 制造商:Winbond Electronics Corp 功能描述:128M DDR SDRAM X16 200MHZ, 65N |
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