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| 型号： | W9412G6IH-5 |
| 厂商： | Winbond Electronics |
| 文件页数： | 2/53页 |
| 文件大小： | 0K |
| 描述： | IC DDR-400 SDRAM 128MB 66TSSOPII |
| 标准包装： | 108 |
| 格式 - 存储器： | RAM |
| 存储器类型： | DDR SDRAM |
| 存储容量： | 128M（8Mx16） |
| 速度： | 250MHz |
| 接口： | 并联 |
| 电源电压： | 2.3 V ~ 2.7 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 66-TSSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 66-TSOP II |
| 包装： | 托盘 |
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W9412G6IH
7.10.1
7.10.2
7.10.3
7.10.4
7.10.5
7.10.6
7.10.7
Burst Length field (A2 to A0)...................................................................... 14
Addressing Mode Select (A3) .................................................................... 15
CAS Latency field (A6 to A4) ..................................................................... 16
DLL Reset bit (A8) ..................................................................................... 16
Mode Register/Extended Mode register change bits (BA0, BA1).............. 16
Extended Mode Register field.................................................................... 16
Reserved field ............................................................................................ 16
8.
OPERATION MODE ................................................................................................................. 17
8.1
8.2
8.3
8.4
Simplified Truth Table................................................................................................... 17
Function Truth Table..................................................................................................... 18
Function Truth Table for CKE ....................................................................................... 21
Simplified Stated Diagram ............................................................................................ 22
9.
ELECTRICAL CHARACTERISTICS......................................................................................... 23
9.1
9.2
9.3
9.4
9.5
9.6
9.7
Absolute Maximum Ratings .......................................................................................... 23
Recommended DC Operating Conditions .................................................................... 23
Capacitance .................................................................................................................. 24
Leakage and Output Buffer Characteristics.................................................................. 24
DC Characteristics ........................................................................................................ 25
AC Characteristics and Operating Condition................................................................ 26
AC Test Conditions....................................................................................................... 27
10.
SYSTEM CHARACTERISTICS FOR DDR SDRAM................................................................. 30
10.1
10.2
10.3
10.4
10.5
10.6
10.7
10.8
10.9
Table 1: Input Slew Rate for DQ, DQS, and DM .......................................................... 30
Table 2: Input Setup & Hold Time Derating for Slew Rate ........................................... 30
Table 3: Input/Output Setup & Hold Time Derating for Slew Rate ............................... 30
Table 4: Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate................ 30
Table 5: Output Slew Rate Characteristics (X16 Devices only) ................................... 30
Table 6: Output Slew Rate Matching Ratio Characteristics ......................................... 31
Table 7: AC Overshoot/Undershoot Specification for Address and Control Pins......... 31
Table 8: Overshoot/Undershoot Specification for Data, Strobe, and Mask Pins.......... 32
System Notes:............................................................................................................... 33
11.
TIMING WAVEFORMS ............................................................................................................. 35
11.1
11.2
11.3
11.4
11.5
11.6
Command Input Timing ................................................................................................ 35
Timing of the CLK Signals ............................................................................................ 35
Read Timing (Burst Length = 4) ................................................................................... 36
Write Timing (Burst Length = 4).................................................................................... 37
DM, DATA MASK (W9412G6IH) .................................................................................. 38
Mode Register Set (MRS) Timing................................................................................. 39
Publication Release Date: Sep. 16, 2009
-2-
Revision A06
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W9412G6JH | 制造商:WINBOND 制造商全称:Winbond 功能描述:2M ? 4 BANKS ? 16 BITS DDR SDRAM |
| W9412G6JH-4 | 制造商:Winbond Electronics Corp 功能描述:8*16B DDR1 制造商:Winbond Electronics Corp 功能描述:IC DDR SDRAM 128M 250MHZ 66TSOP |
| W9412G6JH-5 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 128M-Bit 8Mx16 2.5V 66-Pin TSOP 制造商:Winbond Electronics Corp 功能描述:128M BIT DDR1 |
| W9412G6JH-5I | 功能描述:IC DDR SDRAM 128MBIT 66TSOPII RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘 |
| W9412G6JH-5TR | 制造商:Winbond Electronics Corp 功能描述:128M DDR SDRAM X16 200MHZ, 65N |
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