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| 型号： | W9412G6IH-5 |
| 厂商： | Winbond Electronics |
| 文件页数： | 3/53页 |
| 文件大小： | 0K |
| 描述： | IC DDR-400 SDRAM 128MB 66TSSOPII |
| 标准包装： | 108 |
| 格式 - 存储器： | RAM |
| 存储器类型： | DDR SDRAM |
| 存储容量： | 128M（8Mx16） |
| 速度： | 250MHz |
| 接口： | 并联 |
| 电源电压： | 2.3 V ~ 2.7 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 66-TSSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 66-TSOP II |
| 包装： | 托盘 |
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W9412G6IH
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Extend Mode Register Set (EMRS) Timing .................................................................. 40
Auto-precharge Timing (Read Cycle, CL = 2) .............................................................. 41
Auto-precharge Timing (Read cycle, CL = 2), continued ............................................. 42
Auto-precharge Timing (Write Cycle).......................................................................... 43
Read Interrupted by Read (CL = 2, BL = 2, 4, 8) ........................................................ 44
Burst Read Stop (BL = 8) ............................................................................................ 44
Read Interrupted by Write & BST (BL = 8).................................................................. 45
Read Interrupted by Precharge (BL = 8) ..................................................................... 45
Write Interrupted by Write (BL = 2, 4, 8) ..................................................................... 46
Write Interrupted by Read (CL = 2, BL = 8) ................................................................ 46
Write Interrupted by Read (CL = 3, BL = 4) ................................................................ 47
Write Interrupted by Precharge (BL = 8) ..................................................................... 47
2 Bank Interleave Read Operation (CL = 2, BL = 2) ................................................... 48
2 Bank Interleave Read Operation (CL = 2, BL = 4) ................................................... 48
4 Bank Interleave Read Operation (CL = 2, BL = 2) ................................................... 49
4 Bank Interleave Read Operation (CL = 2, BL = 4) ................................................... 49
Auto Refresh Cycle ..................................................................................................... 50
Precharged/Active Power Down Mode Entry and Exit Timing .................................... 50
Input Clock Frequency Change during Precharge Power Down Mode Timing .......... 50
Self Refresh Entry and Exit Timing ............................................................................. 51
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Package Specification............................................................................................................... 52
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66L TSOP – 400 mil ..................................................................................................... 52
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REVISION HISTORY ................................................................................................................ 53
Publication Release Date: Sep. 16, 2009
-3-
Revision A06
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W9412G6JH | 制造商:WINBOND 制造商全称:Winbond 功能描述:2M ? 4 BANKS ? 16 BITS DDR SDRAM |
| W9412G6JH-4 | 制造商:Winbond Electronics Corp 功能描述:8*16B DDR1 制造商:Winbond Electronics Corp 功能描述:IC DDR SDRAM 128M 250MHZ 66TSOP |
| W9412G6JH-5 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 128M-Bit 8Mx16 2.5V 66-Pin TSOP 制造商:Winbond Electronics Corp 功能描述:128M BIT DDR1 |
| W9412G6JH-5I | 功能描述:IC DDR SDRAM 128MBIT 66TSOPII RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘 |
| W9412G6JH-5TR | 制造商:Winbond Electronics Corp 功能描述:128M DDR SDRAM X16 200MHZ, 65N |
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