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参数资料
| 型号： | W332M64V-100SBI |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 32M X 64 SYNCHRONOUS DRAM, 7 ns, PBGA208 |
| 封装： | 13 X 22 MM, PLASTIC, BGA-208 |
| 文件页数： | 15/15页 |
| 文件大小： | 355K |
| 代理商： | W332M64V-100SBI |
9
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W332M64V-XSBX
August 2007
Rev. 4
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on VCC, VCCQ Supply relative to Vss
-1 to 4.6
V
Voltage on NC or I/O pins relative to Vss
-1 to 4.6
V
Operating Temperature TA (Mil)
-55 to +125
°C
Operating Temperature TA (Ind)
-40 to +85
°C
Storage Temperature, Plastic
-55 to +125
°C
NOTE:
Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specication is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE (NOTE 2)
Parameter
Symbol
Max
Unit
Input Capacitance: CLK
CI1
TBD
pF
Addresses, BA0-1 Input Capacitance
CA
TBD
pF
Input Capacitance: All other input-only pins
CI2
TBD
pF
Input/Output Capacitance: I/Os
CIO
TBD
pF
BGA THERMAL RESISTANCE
Description
Symbol
Max
Unit
Notes
Junction to Ambient (No Airow)
Theta JA
20.7
C/W
1
Junction to Ball
Theta JB
18.1
C/W
1
Junction to Case (Top)
Theta JC
7.5
C/W
1
NOTE:
Refer to Application Note “PBGA Thermal Resistance Correlation” at www.whiteedc.com in the application notes section for modeling conditions.
specified for the clock pin) prior to CKE going back
HIGH. Once CKE is HIGH, the SDRAM must have NOP
commands issued (a minimum of two clocks) for tXSR,
because time is required for the completion of any internal
refresh in progress.
Upon exiting the self refresh mode, AUTO REFRESH
commands must be issued as both SELF REFRESH and
AUTO REFRESH utilize the row refresh counter.
相关PDF资料 |
PDF描述 |
|---|---|
| W332M64V-125SBC | 32M X 64 SYNCHRONOUS DRAM, 6 ns, PBGA208 |
| W332M64V-133SBC | 32M X 64 SYNCHRONOUS DRAM, 5.5 ns, PBGA208 |
| W332M64V-125SBM | 32M X 64 SYNCHRONOUS DRAM, 6 ns, PBGA208 |
| W332M72V-133BM | 32M X 72 SYNCHRONOUS DRAM, 5.5 ns, PBGA219 |
| W332M72V-133BI | 32M X 72 SYNCHRONOUS DRAM, 5.5 ns, PBGA219 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W332M64V-100SBM | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 100MHZ, 208 PBGA, MIL-TEMP. - Bulk |
| W332M64V-125BC | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 125MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
| W332M64V-125BI | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 125MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W332M64V-125BM | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 125MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W332M64V-125SBC | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 125MHZ, 208 PBGA, COMMERCIAL TEMP. - Bulk |
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