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参数资料
| 型号： | W332M64V-100SBI |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 32M X 64 SYNCHRONOUS DRAM, 7 ns, PBGA208 |
| 封装： | 13 X 22 MM, PLASTIC, BGA-208 |
| 文件页数： | 3/15页 |
| 文件大小： | 355K |
| 代理商： | W332M64V-100SBI |
11
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W332M64V-XSBX
August 2007
Rev. 4
Parameter
Symbol
-100
-125
-133
Unit
Min
Max
Min
Max
Min
Max
Access time from CLK (pos. edge)
CL = 3
tAC
7
6
5.5
ns
CL = 2
tAC
766
ns
Address hold time
tAH
1
0.8
ns
Address setup time
tAS
2
1.5
ns
CLK high-level width
tCH
3
2.5
ns
CLK low-level width
tCL
3
2.5
ns
Clock cycle time (22)
CL = 3
tCK
10
8
7.5
ns
CL = 2
tCK
13
10
ns
CKE hold time
tCKH
1
0.8
ns
CKE setup time
tCKS
2
1.5
ns
CS#, RAS#, CAS#, WE#, DQM hold time
tCMH
1
0.8
ns
CS#, RAS#, CAS#, WE#, DQM setup time
tCMS
2
1.5
ns
Data-in hold time
tDH
1
0.8
ns
Data-in setup time
tDS
2
1.5
ns
Data-out high-impedance time
CL = 3
(10)
tHZ
7
6
5.5
ns
CL = 2
(10)
tHZ
766
ns
Data-out low-impedance time
tLZ
1
ns
Data-out hold time (load)
tOH
3
ns
Data-out hold time (no load) (26)
tOHN
1.8
ns
ACTIVE to PRECHARGE command
tRAS
50
120,000
50
120,000
50
120,00
ns
ACTIVE to ACTIVE command period
tRC
70
68
ns
ACTIVE to READ or WRITE delay
tRCD
20
ns
Refresh period (8,192 rows) – Commercial, Industrial
tREF
64
ms
Refresh period (8,192 rows) – Military
tREF
16
ms
AUTO REFRESH period
tRFC
70
ns
PRECHARGE command period
tRP
20
ns
ACTIVE bank A to ACTIVE bank B command
tRRD
20
ns
Transition time (7)
tT
0.3
1.2
0.3
1.2
0.3
1.2
ns
WRITE recovery time
(23)
tWR
1 CLK + 7ns
1 CLK +
7.5ns
—
(24)
15
ns
Exit SELF REFRESH to ACTIVE command
tXSR
80
75
ns
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CHARACTERISTICS
(NOTES 5, 6, 8, 9, 11)
相关PDF资料 |
PDF描述 |
|---|---|
| W332M64V-125SBC | 32M X 64 SYNCHRONOUS DRAM, 6 ns, PBGA208 |
| W332M64V-133SBC | 32M X 64 SYNCHRONOUS DRAM, 5.5 ns, PBGA208 |
| W332M64V-125SBM | 32M X 64 SYNCHRONOUS DRAM, 6 ns, PBGA208 |
| W332M72V-133BM | 32M X 72 SYNCHRONOUS DRAM, 5.5 ns, PBGA219 |
| W332M72V-133BI | 32M X 72 SYNCHRONOUS DRAM, 5.5 ns, PBGA219 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W332M64V-100SBM | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 100MHZ, 208 PBGA, MIL-TEMP. - Bulk |
| W332M64V-125BC | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 125MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
| W332M64V-125BI | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 125MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W332M64V-125BM | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 125MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W332M64V-125SBC | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 125MHZ, 208 PBGA, COMMERCIAL TEMP. - Bulk |
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