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参数资料
| 型号： | W3E64M16S-333SBC |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 64M X 16 DDR DRAM, 0.7 ns, PBGA60 |
| 封装： | 10 X 12.50 MM, PLASTIC, BGA-60 |
| 文件页数： | 7/17页 |
| 文件大小： | 761K |
| 代理商： | W3E64M16S-333SBC |
15
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3E64M16S-XSBX
January 2007
Rev. 5
BALL #1 ID
2.56 MAX
BALL A1 ID
OPTIONAL
SOLDER BALLS
BALL A1
CL
.45
60X
SOLDER BALL DIAMETER REFERS TO
POST REFLOW CONDITION. THE
PRE-REFLOW DIAMETER IS 0.40mm.
BALL A9
11.00
5.50 ±0.05
6.25 ±0.05
12.50 ±0.10
1.00
TYP
6.40
1.80
CTR
0.80 (TYP)
3.20 ±0.05 5.00 ±0.05
10.00 ±0.10
That is, from the time the AUTO REFRESH command is registered, CKE must be
active at each rising clock edge, until tRFC has been satised.
50. ICC2N species the DQ, DQS, and DM to be driven to a valid high or low logic level.
ICC2Q is similar to ICC2F except ICC2Q species the address and control inputs to
remain stable. Although ICC2F, ICC2N, and ICC2Q are similar, ICC2F is “worst case.”
51. Whenever the operating frequency is altered, not including jitter, the DLL is required
to be reset. This is followed by 200 clock cycles before any READ command.
52. This is the DC voltage supplied at the DRAM and is inclusive of all noise up to 20
MHz. Any noise above 20 MHz at the DRAM generated from any source other than
that of the DRAM itself may not exceed the DC coltage range of 2.6V ± 100mV.
53. For 333Mbs operation of commercial and Industrial temperature CL = 2.5, at
Military temperature CL = 3.
54. Self refresh is available in commercial and industrial temperatures only.
ALL LINEAR DIMENSIONS ARE MILLIMETERS
PACKAGE DIMENSION: 60 PLASTIC BALL GRID ARRAY (PBGA)
相关PDF资料 |
PDF描述 |
|---|---|
| W3E64M72S-266SBC | 64M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| W3E64M72S-333SBI | 64M X 72 DDR DRAM, 0.7 ns, PBGA219 |
| W3E64M72S-333SBM | 64M X 72 DDR DRAM, 0.7 ns, PBGA219 |
| W3E64M72S-200SBC | 64M X 72 DDR DRAM, 0.8 ns, PBGA219 |
| W3E64M72S-333SBC | 64M X 72 DDR DRAM, 0.7 ns, PBGA219 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E64M16S-333SBI | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 333 MHZ, 60 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E64M16S-333SBM | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 333 MHZ, 60 PBGA, MIL-TEMP. - Bulk |
| W3E64M72S-200BC | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:64Mx72 DDR SDRAM |
| W3E64M72S-200BI | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:64Mx72 DDR SDRAM |
| W3E64M72S-200BM | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:64Mx72 DDR SDRAM |
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