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参数资料
| 型号： | W3EG64129S265D3 |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 128M X 64 DDR DRAM MODULE, DMA184 |
| 封装： | DIMM-184 |
| 文件页数： | 4/8页 |
| 文件大小： | 122K |
| 代理商： | W3EG64129S265D3 |
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3EG64129S-D3
June 2004
Rev. 0
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 to 3.6
V
Voltage on VCC supply relative to VSS
VCC, VCCQ
-1.0 to 3.6
V
Storage Temperature
TSTG
-55 to +150
°C
Power Dissipation
PD
16
W
Short Circuit Current
IOS
50
mA
Note:
Permanent device damage may occur if ‘ABSOLUTE MAXIMUM RATINGS’ are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability
DC CHARACTERISTICS
0°C TA 70°C, VCC = 2.5V ± 0.2V
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
2.3
2.7
V
Supply Voltage
VCCQ
2.3
2.7
V
Reference Voltage
VREF
1.15
1.35
V
Termination Voltage
VTT
1.15
1.35
V
Input High Voltage
VIH
VREF + 0.15
VCCQ + 0.3
V
Input Low Voltage
VIL
-0.3
VREF -0.15
V
Output High Voltage
VOH
VTT + 0.76
—
V
Output Low Voltage
VOL
—VTT-0.76
V
CAPACITANCE
TA = 25°C. f = 1MHz, VCC = 2.5V, VREF = 1.4V ± 200mV
Parameter
Symbol
Max
Unit
Input Capacitance (A0-A11)
CIN1
53
pF
Input Capacitance (RAS#,CAS#,WE#)
CIN2
53
pF
Input Capacitance (CKE0, CKE1)
CIN3
29
pF
Input Capacitance (CK0-2,CK0-2#)
CIN4
18
pF
Input Capacitance (CS0#, CS1#)
CIN5
29
pF
Input Capacitance (DQM0-DQM8)
CIN6
8pF
Input Capacitance (BA0-BA1)
CIN7
53
pF
Data input/output capacitance (DQ0-DQ63)(DQS)
COUT
8pF
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相关代理商/技术参数 |
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| W3EG64129S-D3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1G- 128Mx64 DDR SDRAM UNBUFFERED |
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| W3EG64255MS100JD3GG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL |
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