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参数资料
| 型号： | W3EG64129S265D3 |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 128M X 64 DDR DRAM MODULE, DMA184 |
| 封装： | DIMM-184 |
| 文件页数： | 5/8页 |
| 文件大小： | 122K |
| 代理商： | W3EG64129S265D3 |
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3EG64129S-D3
June 2004
Rev. 0
PRELIMINARY
IDD SPECIFICATIONS AND TEST CONDITIONS
Recommended operating conditions, 0°C TA 70°C, VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V
Includes DDR SDRAM component only
Parameter
Symbol Conditions
DDR266@CL=2
Max
DDR266@CL=2.5
Max
DDR200@CL=2
Max
Units
Operating Current
IDD0
One device bank; Active - Precharge;
tRC=tRC (MIN); tCK=tCK (MIN); DQ,DM
and DQS inputs changing once per
clock cycle; Address and control
inputs changing once every two
cycles.
2840
mA
Operating Current
IDD1
One device bank; Active-Read-
Precharge Burst = 2; tRC=tRC (MIN);
tCK=tCK (MIN); lOUT = 0mA; Address
and control inputs changing once per
clock cycle.
3040
mA
Precharge Power-
Down Standby
Current
IDD2P
All device banks idle; Power-down
mode; tCK=tCK (MIN); CKE=(low)
95
rnA
Idle Standby Current
IDD2F
CS# = High; All device banks idle;
tCK=tCK (MIN); CKE = high; Address
and other control inputs changing
once per clock cycle. VIN = VREF for
DQ, DQS and DM.
800
mA
Active Power-Down
Standby Current
IDD3P
One device bank active; Power-
Down mode; tCK (MIN); CKE=(low)
800
mA
Active Standby
Current
IDD3N
CS# = High; CKE = High; One device
bank; Active-Precharge; tRC=tRAS
(MAX); tCK=tCK (MIN); DQ, DM and
DQS inputs changing twice per clock
cycle; Address and other control
inputs changing once per clock cycle.
1520
mA
Operating Current
IDD4R
Burst = 2; Reads; Continuous burst;
One device bank active; Address
and control inputs changing once
per clock cycle; TCK= TCK (MIN); lOUT
= 0mA.
3520
mA
Operating Current
IDD4W
Burst = 2; Writes; Continuous burst;
One device bank active; Address
and control inputs changing once per
clock cycle; tCK=tCK (MIN); DQ,DM
and DQS inputs changing once per
clock cycle.
4000
rnA
Auto Refresh
Current
IDD5
tRC = tRC (MIN)
4960
mA
Self Refresh Current
IDD6
CKE 0.2V
80
mA
Operating Current
IDD7A
Four bank interleaving Reads (BL=4)
with auto precharge with tRC=tRC
(MIN); tCK=tCK (MIN); Address and
control inputs change only during
Active Read or Write commands.
7680
mA
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相关代理商/技术参数 |
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|---|---|
| W3EG64129S-D3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1G- 128Mx64 DDR SDRAM UNBUFFERED |
| W3EG6418S-D3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128MB - 16Mx64 DDR SDRAM UNBUFFERED |
| W3EG6418S-JD3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128MB - 16Mx64 DDR SDRAM UNBUFFERED |
| W3EG64255MS100JD3GG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL |
| W3EG64255MS100JD3MG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL |
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