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参数资料
| 型号： | W3EG64129S265D3 |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 128M X 64 DDR DRAM MODULE, DMA184 |
| 封装： | DIMM-184 |
| 文件页数： | 6/8页 |
| 文件大小： | 122K |
| 代理商： | W3EG64129S265D3 |
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3EG64129S-D3
June 2004
Rev. 0
PRELIMINARY
IDD1 : OPERATING CURRENT : ONE BANK
1.
Typical Case : VCC=2.5V, T=25°C
2.
Worst Case : VCC=2.7V, T=10°C
3.
Only one bank is accessed with tRC (min), Burst
Mode, Address and Control inputs on NOP edge
are changing once per clock cycle. IOUT = 0mA
4.
Timing Patterns :
DDR200 (100 MHz, CL=2) : tCK=10ns, CL2,
BL=4, tRCD=2*tCK, tRAS=5*tCK
Read : A0 N R0 N N P0 N A0 N - repeat the
same timing with random address changing;
50% of data changing at every burst
DDR266 (133MHz, CL=2.5) : tCK=7.5ns,
CL=2.5, BL=4, tRCD=3*tCK, tRC=9*tCK, tRAS=5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat
the same timing with random address
changing; 50% of data changing at every burst
DDR266 (133MHz, CL=2) : tCK=7.5ns, CL=2,
BL=4, tRCD=3*tCK, tRC=9*tCK, tRAS=5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat
the same timing with random address
changing; 50% of data changing at every burst
IDD7A : OPERATING CURRENT : FOUR BANKS
1.
Typical Case : VCC=2.5V, T=25°C
2.
Worst Case : VCC=2.7V, T=10°C
3.
Four banks are being interleaved with tRC (min),
Burst Mode, Address and Control inputs on NOP
edge are not changing. Iout=0mA
4.
Timing Patterns :
DDR200 (100 MHz, CL=2) : tCK=10ns, CL2,
BL=4, tRRD=2*tCK, tRCD=3*tCK, Read with
Autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0
repeat the same timing with random address
changing; 100% of data changing at every
burst
DDR266 (133MHz, CL=2.5) : tCK=7.5ns,
CL=2.5, BL=4, tRRD=3*tCK, tRCD=3*tCK
Read with Autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N
A1 R0 - repeat the same timing with random
address changing; 100% of data changing at
every burst
DDR266 (133MHz, CL=2) : tCK=7.5ns, CL2=2,
BL=4, tRRD=2*tCK, tRCD=2*tCK
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N
A1 R0 - repeat the same timing with random
address changing; 100% of data changing at
every burst
DETAILED TEST CONDITIONS FOR DDR SDRAM IDD1 & IDD7A
Legend:
A = Activate, R = Read, W = Write, P = Precharge, N = NOP
A (0-3) = Activate Bank 0-3
R (0-3) = Read Bank 0-3
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相关代理商/技术参数 |
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| W3EG64129S-D3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1G- 128Mx64 DDR SDRAM UNBUFFERED |
| W3EG6418S-D3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128MB - 16Mx64 DDR SDRAM UNBUFFERED |
| W3EG6418S-JD3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128MB - 16Mx64 DDR SDRAM UNBUFFERED |
| W3EG64255MS100JD3GG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL |
| W3EG64255MS100JD3MG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL |
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