- 您现在的位置：买卖IC网 > PDF目录276857 > W3H128M64E2-400SBC (MICROSEMI CORP-PMG MICROELECTRONICS) DDR DRAM, PBGA208 PDF资料下载
参数资料
| 型号： | W3H128M64E2-400SBC |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | DDR DRAM, PBGA208 |
| 封装： | 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件页数： | 3/31页 |
| 文件大小： | 989K |
| 代理商： | W3H128M64E2-400SBC |
第1页第2页当前第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页
W3H128M64E-XSBX
11
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
October 2008
Rev. 1
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
CAS LATENCY (CL)
The CAS latency (CL) is dened by bits M4–M6, as shown
in Figure 5. CL is the delay, in clock cycles, between the
registration of a READ command and the availability of the
rst bit of output data. The CL can be set to 4, 5 or 6 clocks,
depending on the speed grade option being used.
DDR2 SDRAM does not support any half-clock latencies.
Reserved states should not be used as unknown operation
or incompatibility with future versions may result.
DDR2 SDRAM also supports a feature called posted
CAS additive latency (AL). This feature allows the READ
command to be issued prior to tRCD (MIN) by delaying the
internal command to the DDR2 SDRAM by AL clocks.
An example of CL = 4 is shown in Figure 6; assume AL =
0. If a READ command is registered at clock edge n, and
the CL is m clocks, the data will be available nominally
coincident with clock edge n+m (this assumes AL = 0).
Burst length = 4
Posted CAS# additive latency (AL) = 0
Shown with nominal
t AC, tDQSCK, and tDQSQ
DON’T CARE
TRANSITIONING DATA
DOUT
n + 3
DOUT
n + 2
DOUT
n + 1
CK
CK#
COMMAND
DQ
DQS, DQS#
CL = 4 (AL = 0)
READ
T0
T1
T2
NOP
DOUT
n
T3
T4
T5
NOP
T6
NOP
FIGURE 6 – CAS LATENCY (CL)
相关PDF资料 |
PDF描述 |
|---|---|
| W3HG264M72EER806AD7MG | 128M X 72 DDR DRAM MODULE, DMA244 |
| W7NCF01GH21ISBCG | 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF256H30IS7DG | 16M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| WED3DG7266V7D1-MG | 64M X 72 SYNCHRONOUS DRAM MODULE, ZMA144 |
| WED7G385ATA33XDI25 | 192M X 16 FLASH 3.3V PROM MODULE, DMA144 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3H128M64E-400SBI | 制造商:Microsemi Corporation 功能描述:128M X 64 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H128M72E-400SBC | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H128M72E-400SBI | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H128M72E-400SBM | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H128M72E-533NBI | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 533MHZ, 208PBGA IND TEMP. - Bulk |
发布紧急采购，3分钟左右您将得到回复。