- 您现在的位置：买卖IC网 > PDF目录245699 > W3H128M64E2-533SBC (MICROSEMI CORP-PMG MICROELECTRONICS) DDR DRAM, PBGA208 PDF资料下载
参数资料
| 型号： | W3H128M64E2-533SBC |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | DDR DRAM, PBGA208 |
| 封装： | 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件页数： | 17/31页 |
| 文件大小： | 989K |
| 代理商： | W3H128M64E2-533SBC |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页当前第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页
W3H128M64E-XSBX
24
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
October 2008
Rev. 1
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
DDR2 ICC SPECIFICATIONS AND CONDITIONS
-55°C ≤ TA ≤ 125°C
Symbol
Proposed Conditions
667
CL6
533
CL5
400
CL4
Units
ICC0
Operating one bank active-precharge current;
tCK = tCK(ICC), tRC = tRC(ICC), tRAS = tRASmin(ICC); CKE is HIGH, CS# is HIGH between valid commands;
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
540
460
mA
ICC1
Operating one bank active-read-precharge current;
IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRC = tRC (ICC), tRAS = tRASmin(ICC), tRCD =
tRCD(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING;
Data pattern is same as ICC4W
640
540
mA
ICC2P
Precharge power-down current;
All banks idle; tCK = tCK(ICC); CKE is LOW; Other control and address bus inputs are STABLE; Data
bus inputs are FLOATING
32
mA
ICC2Q
Precharge quiet standby current;
All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are
STABLE; Data bus inputs are FLOATING
260
180
160
mA
ICC2N
Precharge standby current;
All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are
SWITCHING; Data bus inputs are SWITCHING
280
240
200
mA
ICC3P
Active power-down current;
All banks open; tCK = tCK(ICC); CKE is LOW; Other control and
address bus inputs are STABLE; Data bus inputs are FLOATING
Fast PDN Exit MRS(12) = 0
160
140
120
mA
Slow PDN Exit MRS(12) = 1
40
mA
ICC3N
Active standby current;
All banks open; tCK = tCK(ICC), tRAS = tRASMAX(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between
valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
300
220
200
mA
ICC4W
Operating burst write current;
All banks open, Continuous burst writes; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS =
tRASMAX(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs
are SWITCHING; Data bus inputs are SWITCHING
1,000
760
640
mA
ICC4R
Operating burst read current;
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS =
tRASMAX(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs
are SWITCHING
1,100
780
720
mA
ICC5
Burst auto refresh current;
tCK = tCK(ICC); Refresh command at every tRFC(ICC) interval; CKE is HIGH, CS# is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
1,120
1,040
1,000
mA
ICC6
Self refresh current;
CK and CK# at 0V; CKE ≤ 0.2V; Other control and address bus
inputs
are FLOATING; Data bus inputs are FLOATING
Normal
16
mA
ICC7
Operating bank interleave read current;
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = tRCD(ICC)-1*tCK(ICC); tCK = tCK(ICC),
tRC = tRC(ICC), tRRD = tRRD(ICC), tRCD = 1*tCK(ICC); CKE is HIGH, CS# is HIGH between valid commands;
Address bus inputs are STABLE during DESELECTs; Data bus inputs are switching
1,580
1,420
mA
相关PDF资料 |
PDF描述 |
|---|---|
| W7NCF01GH21IS8CG | 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF256H30CS6BG | 16M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF256H30IS4BG | 16M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| WED7G127ATA33XDI25 | 64M X 16 FLASH 3.3V PROM MODULE, DMA144 |
| WED7G256ATA33XDI25 | 128M X 16 FLASH 3.3V PROM MODULE, DMA144 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3H128M64E-400SBI | 制造商:Microsemi Corporation 功能描述:128M X 64 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H128M72E-400SBC | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H128M72E-400SBI | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H128M72E-400SBM | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H128M72E-533NBI | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 533MHZ, 208PBGA IND TEMP. - Bulk |
发布紧急采购，3分钟左右您将得到回复。