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参数资料
| 型号： | W3H128M64E2-533SBC |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | DDR DRAM, PBGA208 |
| 封装： | 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件页数： | 20/31页 |
| 文件大小： | 989K |
| 代理商： | W3H128M64E2-533SBC |
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W3H128M64E-XSBX
27
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
October 2008
Rev. 1
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
AC TIMING PARAMETERS
(continued)
-55°C ≤ TA < +125°C
Parameter
Symbol
667Mbs CL6
533Mbs CL5
400Mbs CL4
Unit
Min
Max
Min
Max
Min
Max
Command
and
Address
Address and control input pulse
width for each input
t
IPW
0.6
tCK
Address and control input setup
time
t
ISa
400
500
600
ps
t
ISb
200
250
350
ps
Address and control input hold time
t
IHa
400
500
600
ps
t
IHb
275
375
475
ps
CAS# to CAS# command delay
t
CCD
2
tCK
ACTIVE to ACTIVE (same bank)
command
t
RC
55
ns
ACTIVE bank a to ACTIVE bank b
command
t
RRD
10
ns
ACTIVE to READ or WRITE delay
t
RCD
15
ns
Four Bank Activate period
t
FAW
505050
ns
ACTIVE to PRECHARGE
command
t
RAS
40
70,000
40
70,000
40
70,000
ns
Internal READ to precharge
command delay
t
RTP
7.5
ns
Write recovery time
t
WR
15
ns
Auto precharge write recovery +
precharge time
t
DAL
tWR + tRP
ns
Internal WRITE to READ command
delay
t
WTR
7.5
10
ns
PRECHARGE command period
t
RP
15
ns
PRECHARGE ALL command
period
t
RPA
tRP + tCK
ns
LOAD MODE command cycle time
t
MRD
2
tCK
Refresh
CKE low to CK, CK# uncertainty
t
DELAY
tIS +tIH + tCK
ns
REFRESH to Active or Refresh to
Refresh command interval
t
RFC
197.5
70,000
197.5
70,000
197.5
70,000
ns
Average periodic refresh interval
(commercial and industrial)
t
REFI
7.8
μs
Average periodic refresh interval
(military)
t
REFIM
1.95
μs
Exit self refresh to non-READ
command
t
XSNR
tRFC(MIN) + 10
ns
Exit self refresh to READ
t
XSRD
200
tCK
Exit self refresh timing reference
t
lSXR
tIS
ps
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W3H128M64E-400SBI | 制造商:Microsemi Corporation 功能描述:128M X 64 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H128M72E-400SBC | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H128M72E-400SBI | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H128M72E-400SBM | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H128M72E-533NBI | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 533MHZ, 208PBGA IND TEMP. - Bulk |
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