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参数资料
| 型号： | W72M64VB100BI |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA159 |
| 封装： | 13 X 22 MM, PLASTIC, BGA-159 |
| 文件页数： | 10/16页 |
| 文件大小： | 660K |
| 代理商： | W72M64VB100BI |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W72M64VB-XBX
June 2009
Rev. 2
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Operating Temperature
-55 to +125
°C
Supply Voltage Range (VCC)
-0.5 to +4.0
V
Signal Voltage Range
-0.5 to Vcc +0.5
V
Storage Temperature Range
-55 to +150
°C
Endurance (write/erase cycles)
1,000,000 min.
cycles
NOTES:
1.
Stresses above the absolute maximum rating may cause permanent damage to the
device. Extended operation at the maximum levels may degrade performance and
affect reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
3.0
3.6
V
Operating Temp. (Mil.)
TA
-55
+125
°C
Operating Temp. (Ind.)
TA
-40
+85
°C
CAPACITANCE
TA = +25°C, F = 1.0MHz
Parameter
Symbol
Max
Unit
WE1-4# capacitance
CWE
TBD
pF
CS1-4# capacitance
CCS
TBD
pF
Data I/O capacitance
CI/O
TBD
pF
Address input capacitance
CAD
TBD
pF
RESET# capacitance
CRS
TBD
pF
RY/BY# capacitance
CRB
TBD
pF
OE# capacitance
COE
TBD
pF
This parameter is guaranteed by design but not tested.
DATA RETENTION
Parameter
Test Conditions
Min
Unit
Pattern Data
Retention Time
150°C
10
Years
125°C
20
Years
DC CHARACTERISTICS – CMOS COMPATIBLE
VCC = 3.3V ± 0.3V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 3.6V, VIN = GND to VCC
-1
+1
μA
Output Leakage Current
ILO
VCC = 3.6V, VOUT = GND to VCC
-1
1
μA
VCC Active Current for Read (1)
ICC1
CS# = VIL#, OE = VIH, f = 5MHz
65
mA
VCC Active Current for Program or Erase (2,3)
ICC2
CS# = VIL#, OE = VIH, WE# = VIL
140
mA
VCC Standby Current (2)
ICC3
CS# = RESET# = VCC ± 0.3V
21
μA
Automatic Sleep Mode (2,4,5)
ICC5
VIH = VCC ± 0.3V;
VIL = VSS ± 0.3V
21
μA
ACC Accelerated Program Current
IACC
CS# = VIL#, OE = VIH
ACC Pin
40
mA
VCC Pin
120
Input Low Voltage
VIL
-0.5
0.8
V
Input High Voltage
VIH
VCC = min
0.7xVCC
VCC + 0.3
V
Voltage for WP#/ACC Sector
Protect/Unprotect and Program Acceleration
VHH
VCC = 3.0V + 0I10%
11.5
12.5
V
Voltage for Autoselect and Temporary Sector Unprotect
VID
VCC = 3.0V + 0.3.3V
11.5
12.5
V
Output Low Voltage
VOL
IOL = 4.0 mA, VCC = 3.0V
0.45
V
Output High Voltage
VOH1
IOH = -2.0 mA, VCC = 3.0V
2.4
V
Low VCC Lock-Out Voltage (5)
VLKO
2.3
2.5
V
NOTES:
1.
The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz).
The frequency component typically is less than 8 mA/MHz, with OE# at VIH.
2.
Maximum ICC specications are tested with VCC = VCC MAX
3.
ICC active while Embedded Algorithm (program or erase) is in progress.
4.
Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30ns.
5.
Not tested.
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