参数资料
型号: W72M64VB100BI
厂商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分类: 存储器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA159
封装: 13 X 22 MM, PLASTIC, BGA-159
文件页数: 11/16页
文件大小: 660K
代理商: W72M64VB100BI
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W72M64VB-XBX
June 2009
Rev. 2
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS – CS# CONTROLLED
VCC = 3.3V ± 0.3V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
-90
-100
-120
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time (3)
tAVAV
tWC
90
100
120
ns
Write Enable Setup Time
tWLEL
tWS
000
ns
Chip Select Pulse Width
tELEH
tCP
35
45
50
ns
Address Setup Time
tAVEL
tAS
0
ns
Data Setup Time
tDVEH
tDS
45
50
ns
Data Hold Time
tEHDX
tDH
000
ns
Address Hold Time
tELAX
tAH
45
50
ns
Chip Select Pulse Width High (3)
tEHEL
tCPH
35
30
ns
Duration of Word Programming Operation (1)
tWHWH1
360
μs
Sector Erase Time (2) (5)
tWHWH2
10
sec
Read Recovery Time Before Write (3)
tGHEL
000
ns
Chip Programming Time (4)
42
sec
NOTES:
1.
Typical value for tWHWH1 is 7μs.
2.
Typical value for tWHWH2 is 0.4 sec.
3.
Guaranteed by design, but not tested.
4.
Typical value is 36 sec. The typical chip programming time is considerably less than the maximum chip
programming time listed, since most bytes program faster than the maximum program times listed.
5.
At temperatures > + 85C maximum erase time is 25s
FIGURE 2
Current Source
IOL
IOH
CEFF = 50 pf
VZ 1.5V
(Bipolar Supply)
D.U.T.
AC Test Circuit
AC Test Conditions
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 2.5
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
Notes:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75W.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
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