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参数资料
| 型号： | W9412G6CH-5 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 8M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| 封装： | 0.400 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 |
| 文件页数： | 5/55页 |
| 文件大小： | 2011K |
| 代理商： | W9412G6CH-5 |
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W9412G6CH
Publication Release Date: Nov. 19, 2007
- 13 -
Revision A07
7.6 Burst Termination
When the Precharge command is used for a bank in a Burst cycle, the Burst operation is terminated.
When Burst Read cycle is interrupted by the Precharge command, read operation is disabled after
clock cycle of (CAS Latency) from the Precharge command. When the Burst Write cycle is interrupted
by the Precharge command, the input circuit is reset at the same clock cycle at which the precharge
command is issued. In this case, the DM signal must be asserted “high” during tWR to prevent writing
the invalided data to the cell array.
When the Burst Read Stop command is issued for the bank in a Burst Read cycle, the Burst Read
operation is terminated. The Burst read Stop command is not supported during a write burst operation.
Refer to the diagrams for Burst termination.
7.7 Refresh Operation
Two types of Refresh operation can be performed on the device: Auto Refresh and Self Refresh. By
repeating the Auto Refresh cycle, each bank in turn refreshed automatically. The Refresh operation
must be performed 4096 times (rows) within 64mS. The period between the Auto Refresh command
and the next command is specified by tRFC.
Self Refresh mode enters issuing the Self Refresh command (CKE asserted “low”) while all banks are
in the idle state. The device is in Self Refresh mode for as long as CKE held “low”. In the case of
distributed Auto Refresh commands, distributed auto refresh commands must be issued every 15.6 S
and the last distributed Auto Refresh commands must be performed within 15.6 S before entering the
self refresh mode. After exiting from the Self Refresh mode, the refresh operation must be performed
within 15.6 S. In Self Refresh mode, all input/output buffers are disabled, resulting in lower power
dissipation (except CKE buffer). Refer to the diagrams for Refresh operation.
7.8 Power Down Mode
Two types of Power Down Mode can be performed on the device: Active Power Down Mode and
Precharge Power Down Mode.
When the device enters the Power Down Mode, all input/output buffers are disabled resulting in low
power dissipation (except CKE buffer).
Power Down Mode enter asserting CKE “low” while the device is not running a burst cycle. Taking
CKE “high” can exit this mode. When CKE goes high, a No operation command must be input at next
CLK rising edge. Refer to the diagrams for Power Down Mode.
7.9 Input Clock Frequency Change during Precharge Power Down Mode
DDR SDRAM input clock frequency can be changed under following condition:
DDR SDRAM must be in precharged power down mode with CKE at logic LOW level. After a minimum
of 2 clocks after CKE goes LOW, the clock frequency may change to any frequency between minimum
and maximum operating frequency specified for the particular speed grade. During an input clock
frequency change, CKE must be held LOW. Once the input clock frequency is changed, a stable clock
must be provided to DRAM before precharge power down mode may be exited. The DLL must be
RESET via EMRS after precharge power down exit. An additional MRS command may need to be
issued to appropriately set CL etc. After the DLL relock time, the DRAM is ready to operate with new
clock frequency.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W9412G6IH | 制造商:WINBOND 制造商全称:Winbond 功能描述:2M × 4 BANKS × 16 BITS DDR SDRAM |
| W9412G6IH-5 | 功能描述:IC DDR-400 SDRAM 128MB 66TSSOPII RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
| W9412G6JH | 制造商:WINBOND 制造商全称:Winbond 功能描述:2M ? 4 BANKS ? 16 BITS DDR SDRAM |
| W9412G6JH-4 | 制造商:Winbond Electronics Corp 功能描述:8*16B DDR1 制造商:Winbond Electronics Corp 功能描述:IC DDR SDRAM 128M 250MHZ 66TSOP |
| W9412G6JH-5 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 128M-Bit 8Mx16 2.5V 66-Pin TSOP 制造商:Winbond Electronics Corp 功能描述:128M BIT DDR1 |
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