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| 型号： | W9412G6IH-6I |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 8M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| 封装： | 0.400 INCH, ROHS COMPLIANT, TSOP2-66 |
| 文件页数： | 1/53页 |
| 文件大小： | 825K |
| 代理商： | W9412G6IH-6I |
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W9412G6IH
2M
× 4 BANKS × 16 BITS DDR SDRAM
Publication Release Date: Sep. 16, 2009
- 1 -
Revision A06
Table of Contents-
1.
GENERAL DESCRIPTION ......................................................................................................... 4
2.
FEATURES ................................................................................................................................. 4
3.
KEY PARAMETERS ................................................................................................................... 5
4.
PIN CONFIGURATION ...............................................................................................................6
5.
PIN DESCRIPTION..................................................................................................................... 7
6.
BLOCK DIAGRAM ...................................................................................................................... 8
7.
FUNCTIONAL DESCRIPTION.................................................................................................... 9
7.1
Power Up Sequence....................................................................................................... 9
7.2
Command Function ...................................................................................................... 10
7.2.1
Bank Activate Command ........................................................................... 10
7.2.2
Bank Precharge Command........................................................................ 10
7.2.3
Precharge All Command............................................................................ 10
7.2.4
Write Command ......................................................................................... 10
7.2.5
Write with Auto-precharge Command........................................................ 10
7.2.6
Read Command......................................................................................... 10
7.2.7
Read with Auto-precharge Command ....................................................... 10
7.2.8
Mode Register Set Command.................................................................... 11
7.2.9
Extended Mode Register Set Command ................................................... 11
7.2.10
No-Operation Command............................................................................ 11
7.2.11
Burst Read Stop Command ....................................................................... 11
7.2.12
Device Deselect Command ....................................................................... 11
7.2.13
Auto Refresh Command ............................................................................ 11
7.2.14
Self Refresh Entry Command .................................................................... 12
7.2.15
Self Refresh Exit Command....................................................................... 12
7.2.16
Data Write Enable /Disable Command ...................................................... 12
7.3
Read Operation............................................................................................................. 12
7.4
Write Operation............................................................................................................. 13
7.5
Precharge ..................................................................................................................... 13
7.6
Burst Termination.......................................................................................................... 13
7.7
Refresh Operation......................................................................................................... 13
7.8
Power Down Mode ....................................................................................................... 14
7.9
Input Clock Frequency Change during Precharge Power Down Mode........................ 14
7.10
Mode Register Operation.............................................................................................. 14
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W9412G6JH | 制造商:WINBOND 制造商全称:Winbond 功能描述:2M ? 4 BANKS ? 16 BITS DDR SDRAM |
| W9412G6JH-4 | 制造商:Winbond Electronics Corp 功能描述:8*16B DDR1 制造商:Winbond Electronics Corp 功能描述:IC DDR SDRAM 128M 250MHZ 66TSOP |
| W9412G6JH-5 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 128M-Bit 8Mx16 2.5V 66-Pin TSOP 制造商:Winbond Electronics Corp 功能描述:128M BIT DDR1 |
| W9412G6JH-5I | 功能描述:IC DDR SDRAM 128MBIT 66TSOPII RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘 |
| W9412G6JH-5TR | 制造商:Winbond Electronics Corp 功能描述:128M DDR SDRAM X16 200MHZ, 65N |
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